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A Photo Conductivity simulation of ZnON TFT using ATLAS TCAD

Publication Type : Conference Paper

Publisher : IEEE

Source : In 2022 Third International Conference on Intelligent Computing Instrumentation and Control Technologies (ICICICT) (pp. 1060-1064). IEEE.

Url : https://ieeexplore.ieee.org/document/9917832

Campus : Amritapuri

School : School of Engineering

Department : Electronics and Communication

Year : 2022

Abstract : A ZnON TFT was simulated using ATLAS SIL-VACO TCAD by defining the parameters for ZnON active layer using c interpreter file. The simulated structure was biased to get the output and transfer characteristics. Photoconductivity of ZnON TFT was studied by simulating the transient response with light input in biased TFT. Transient response was obtained with constant intensity light of 10 W/cm 2 and different wavelength. Similarly response was noted for different intensity light over time. A test of step input light was done to obtain similar response for available photo current as well as drain current.

Cite this Research Publication : Anjana, J.G., Nair, A.R. and Anand, V., 2022, August. A Photo Conductivity simulation of ZnON TFT using ATLAS TCAD. In 2022 Third International Conference on Intelligent Computing Instrumentation and Control Technologies (ICICICT) (pp. 1060-1064). IEEE

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