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Highly Conformal ALD of ZrO2 at Higher Process Temperatures than the Conventinal TEMAZr-Based Process

Publication Type : Journal Article

Publisher : ECS Transactions

Source : ECS Transactions, The Electrochemical Society, Volume 25, Number 4, p.201–209 (2009)

Campus : Coimbatore

School : School of Engineering

Department : Chemical

Year : 2009

Abstract : An alternative Zr source to tetrakis(ethylmethylamino)zirconium (TEMAZr) was evaluated in this study to develop more thermally robust 300mm ZrO2 ALD process. It was observed that a transition from ALD to CVD takes place at approximately 340åC susceptor temperature. This temperature is significantly higher than that for the commonly used TEMAZr-based ALD process by approximately 40åC. Excellent step coverage of near 100% of ALD ZrO2 has been achieved in 40:1 aspect ratio structures using this new ZrO2 ALD process. ZrO2 ALD films of 5.5nm thickness demonstrated a low leakage current of 2x10-9A/cm2 at 1.2V.

Cite this Research Publication : Y. Senzaki, Okuyama, Y., Kim, G., Kim, H. Young, Barelli, C., Lindner, J., Karim, Z., and Dr. Sasangan Ramanathan, “Highly Conformal ALD of ZrO2 at Higher Process Temperatures than the Conventinal TEMAZr-Based Process”, ECS Transactions, vol. 25, pp. 201–209, 2009.

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