ProgramsView all programs
From the news
- Chancellor Amma Addresses the Parliament of World’s Religions
- Amrita Students Qualify for the European Mars Rover Challenge
Publication Type : Journal Article
Publisher : American Scientific Publishers
Source : Materials Express, American Scientific Publishers, Volume 2, Number 4, p.344–350 (2012)
Campus : Coimbatore
School : Center for Industrial Research and Innovation
Center : Center for Industrial Research and Innovation (ACIRI)
Department : Industrial Research & Innovation
Year : 2012
Abstract : Raman spectroscopic analysis and Hall measurement of wurtzite copper indium sulfide (CuInS2) were carried out. Nanocrystalline wurtzite CuInS2 (CIS) was synthesized by a solvothermal reaction route for these studies. It is observed that the amount of sulfur source, time and temperature of the reaction are the key to control wurtzite phase formation of CuInS2. Wurtzite nanoflakes were formed at 150 °C, with ethylenediamine as the selected solvent and the ratio of Cu:In:S precursor was kept at 1.1:1:5. The Hall measurement resulted in sheet resistivity, ρ, of ∼2 × 105 Ω/sq, Hall coefficient of ∼10 m2/C, mobility of ∼0.5 cm2/V-s and hole concentration of ∼7 × 1013/cm2. Slight shift in the Raman spectra of 1–2 cm−1 was observed between wurtzite and roquesite CuInS2 and was attributed to the stoichiometric variation in Cu/In and/or changes in the chemical environments of the two crystal structures.
Cite this Research Publication : J. C. W. Ho, Sudip Kumar Batabyal, Pramana, S. S., Lum, J., Pham, V. T., Li, D., Xiong, Q., Tok, A. I. Y., and Wong, L. H., “Optical and electrical properties of wurtzite copper indium sulfide nanoflakes”, Materials Express, vol. 2, pp. 344–350, 2012.