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Optical and electrical properties of wurtzite copper indium sulfide nanoflakes

Publication Type : Journal Article

Publisher : American Scientific Publishers

Source : Materials Express, American Scientific Publishers, Volume 2, Number 4, p.344–350 (2012)

Url : http://www.ingentaconnect.com/content/asp/me/2012/00000002/00000004/art00010

Campus : Coimbatore

School : Center for Industrial Research and Innovation

Center : Center for Industrial Research and Innovation (ACIRI)

Department : Industrial Research & Innovation

Year : 2012

Abstract : Raman spectroscopic analysis and Hall measurement of wurtzite copper indium sulfide (CuInS2) were carried out. Nanocrystalline wurtzite CuInS2 (CIS) was synthesized by a solvothermal reaction route for these studies. It is observed that the amount of sulfur source, time and temperature of the reaction are the key to control wurtzite phase formation of CuInS2. Wurtzite nanoflakes were formed at 150 °C, with ethylenediamine as the selected solvent and the ratio of Cu:In:S precursor was kept at 1.1:1:5. The Hall measurement resulted in sheet resistivity, ρ, of ∼2 × 105 Ω/sq, Hall coefficient of ∼10 m2/C, mobility of ∼0.5 cm2/V-s and hole concentration of ∼7 × 1013/cm2. Slight shift in the Raman spectra of 1–2 cm−1 was observed between wurtzite and roquesite CuInS2 and was attributed to the stoichiometric variation in Cu/In and/or changes in the chemical environments of the two crystal structures.

Cite this Research Publication : J. C. W. Ho, Sudip Kumar Batabyal, Pramana, S. S., Lum, J., Pham, V. T., Li, D., Xiong, Q., Tok, A. I. Y., and Wong, L. H., “Optical and electrical properties of wurtzite copper indium sulfide nanoflakes”, Materials Express, vol. 2, pp. 344–350, 2012.

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