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Publication Type : Book Chapter
Publisher : Springer - Nanoelectronic Materials and Devices
Source : Springer - Nanoelectronic Materials and Devices, Lecture Notes in Electrical Engineering, Volume 466, 29-35, November 2017.
Campus : Chennai
School : School of Engineering
Center : Research & Projects
Department : Sciences
Verified : Yes
Year : 2017
Abstract : A theoretical model and simulation is presented to express the electron and hole dynamics in InAs/GaAs quantum dots (QDs). For a fixed aspect ratio of 0.3, quantized energy states were computed using eight-band k.p model by varying the QD size and for different operating temperatures. Computational results show alteration in the dynamical behaviour at different temperatures. We obtained longer electron storage capability for 20 nm dot as compared to holes at room temperature operation. However, due to slower tunnelling rate at cryogenic temperatures within 20–50 K, smaller-sized QDs of 12 nm are suitable for memory devices in information storage for greater time span.
Cite this Research Publication : V. Damodaran and K. Ghosh, "Size optimization of InAs/GaAs quantum dots for longer storage memory applications", Springer - Nanoelectronic Materials and Devices, Lecture Notes in Electrical Engineering, Volume 466, 29-35, November 2017.