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Study of device physics in impact ionisation MOSFET using synopsys TCAD tools

Publication Type : Conference Proceedings

Publisher : IEEE

Source : Computers and Communications (ICAECC) (IEEE) held on October 10, 2014, in Bangalore

Url : https://ieeexplore.ieee.org/document/7002450

Campus : Bengaluru

School : School of Engineering

Department : Electronics and Communication

Verified : No

Year : 2021

Abstract : Impact ionisation MOSFET (IMOS) is a new and promising alternative for conventional MOSFET owing to its low subthreshold slope. With the aid of TCAD simulation tools and the resultant figures, the basic physics behind IMOS operation has been studied in this paper. The I d -V g curve resulting from this study having a subthreshold slope of 1.272mV/dec is also presented in the paper.

Cite this Research Publication : 2014

"Shruthi A. S.", Study of Device Physics in Impact Ionisation MOSFET Using Synopsys TCAD Tools 2014 International Conference on Advances in Electronics, Computers and Communications (ICAECC) (IEEE) held on October 10, 2014, in Bangalore

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