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Ultrathin Hafnium Silicate Films with TaN and Polysilicon Gate Electrodes for Gate Dielectric Application

Publication Type : Conference Paper

Publisher : 32nd IEEE Semiconductor Interface Specialist Conference, Washington DC

Source : 32nd IEEE Semiconductor Interface Specialist Conference, Washington DC (2001)

Campus : Amritapuri

School : School of Engineering

Department : Electronics and Communication

Year : 2001

Abstract :

Cite this Research Publication : Dr. Sundararaman Gopalan, Dharmarajan, E., Nieh, R., Onishi, K., Kang, C. S., Choi, R., Cho, H., and Lee, J. C., “Ultrathin Hafnium Silicate Films with TaN and Polysilicon Gate Electrodes for Gate Dielectric Application”, in 32nd IEEE Semiconductor Interface Specialist Conference, Washington DC, 2001.

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