Publication

Abstract : This paper gives a comparative study of thin-film transistor (TFT) configurations using TCAD by analyzing the structural and electrical properties of Staggered and coplanar TFTs by implementing these configuration structures in TCAD,and have studied the characteristics of top-gated and bottom-gated TFTs, both in Staggered and Co-Planar and compared the potential, electric field behaviour, and electron concentration.Our study aims to support the wide use in different electronic applications.Our comparisons in I-V characteristic of staggered bottom-gate, staggered top-gate, and coplanar top gate TFTs is that staggered bottom-gate TFTs offer the best performance in terms of on-current and field-effect mobility.