Publication

Abstract : The preparation and characterization of the multilayered ferroelectric/dielectric thin films are investigated and discussed. The layered structure provides an effectual process to enhance the ferroelectric as well as the dielectric properties of the multilayered fabricated thin films. To investigate the improvement in the dielectric and the ferroelectric properties, structural characterization and electrical characterization was carried out on the device. XRD, analyses were performed to get the crystalline structure and also the surface quality of the deposited films. The capacitance vs. voltage, current vs. voltage, charge vs. voltage and the PUND iteration characteristics were obtained to get the electrical characterization of the device. The multilayered dielectric/ferroelectric thin films have been attracting great interest for their simple structure with improved dielectric insulation and better ferroelectric properties compared to single ferroelectric layered devices. In the multilayered ferroelectric/dielectric thin film the leakage current has reduced to ~ 2 nA and the memory window of 3.7 V is obtained. Further research and a well-designed ferroelectric/dielectric device may provide improved device performance for the non-volatile memory storage application.