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Publication Type : Conference Paper
Publisher : International SoC Design Conference, Gyeongju, South Korea - 2015
Source : International SoC Design Conference, Gyeongju, South Korea - 2015
Campus : Chennai
School : School of Engineering
Center : Amrita Innovation & Research
Department : Electronics and Communication
Verified : Yes
Year : 2015
Abstract : Gain cell eDRAMs are drawing a growing attention because of their preferable embedded attributes [1−3]. In this work, we propose and demonstrate a 2T gain cell eDRAM with a novel charge injection technique, which enhances the data retention without an increase of bit-cell area.