Publication Type : Journal Article
Publisher : Journal of Circuits, Systems, and Computers
Source : Journal of Circuits, Systems, and Computers. Vol.31, No.1, 03 Jul 2021 World Scientific Publishing Company. DOI: 10.1142/S0218126622500013.
Keywords : Widebandgm, boosting, low noise amplifier (LNA), noise figure, linearity, mm-Wave spectrum, channel bonding, WiGig
Campus : Bengaluru
School : School of Engineering
Department : Electronics and Communication
Year : 2021
Abstract : This paper presents an inductor less wideband low noise amplifier (LNA) with an area of 0.3mm2, using 130nm SiGe BiCMOS technology targeted for 5G WiGig wireless application. A gm boosting amplifier used at the intermediate node of the cascode topology to reduce the noise contribution of the common base (CB) transistor for the first time in SiGe HBT technology. Mathematical analysis shows that the proposed high frequency gm boosting technique on the CB transistor can be optimally tuned for either low NF or high linearity. Furthermore, the circuit incorporates variable capacitors for multimode capability, ensuring optimal performance in all four WiGig channels. Post layout EM simulation of the circuit shows that the resultant LNA has a maximum gain of 21.08dB with the −3 dB frequency over 56GHz to 67.3GHz. The proposed LNA exhibits a minimum noise figure of 4.3dB and shows high linearity with an input referred IP3 of −2.7dB. The designed when operated using supply voltage of 1.2V consumes a total dc power of 8.9mW.
Cite this Research Publication : Pournamy S, Navin Kumar and Maran P, “A Linear High Frequency gm Boosting Wideband LNA in 130 nm SiGe HBT with Minimum NF of 4.3 dB for WiGig Application”, Journal of Circuits, Systems, and Computers. Vol.31, No.1, 03 Jul 2021 World Scientific Publishing Company. DOI: 10.1142/S0218126622500013.