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Publication Type : Conference Paper
Publisher : 2017 International Conference on Circuit ,Power and Computing Technologies
Source : 2017 International Conference on Circuit ,Power and Computing Technologies (ICCPCT) (2017)
Url : https://ieeexplore.ieee.org/abstract/document/8074167
Keywords : Armchair GNR (AGNR), back scattering effect, Drain current, electron backscattering, electrostatic effects, Field effect transistors, Graphene, graphene devices, Graphene Nanoribbon(GNR), Integrated circuit modeling, Logic gates, mathematical model, Nanoribbons, Scattering, Schottky Barrier (SB), Schottky barriers, Schottky gate field effect transistors, Semiconductor device models, short-channel effects, Single gate transistors, tri-gate concept, Tri-Gate Schottky Barrier Graphene Nanoribbon FET, Tri-Gate Schottky Barrier Graphene Nanoribbon field effect transistor
Campus : Coimbatore
School : School of Engineering
Department : Electronics and Communication
Year : 2017
Abstract : Single gate transistors will show a diverse effects after reaching the absolute limits of the scaling like short-channel effects and electrostatic effects. In this paper Tri-Gate Schottky Barrier Graphene Nanoribbon FET is proposed to suppress the effects of short-channel effects and increases the performance without increasing the width of the transistor. As the length of the channel increases the probability of electron being scattered from source to drain decreases so back scattering effect has been introduced for the exact analysis and the tri-gate concept has been introduced to increase the drain current. The results shown a tremendous increase in the drain current with this new design.
Cite this Research Publication : K. M. S. Krishna and Dr. Bala Tripura Sundari B., “Design of Tri-Gate Schottky Barrier Graphene Nanoribbon Field Effect Transistor”, in 2017 International Conference on Circuit ,Power and Computing Technologies (ICCPCT), 2017.