Publication

Abstract : BaMnxTi1-xO3 thin film on a silicon substrate has been prepared through the sol–gel spin coating process. The ferroelectric BaMnxTi1-xO3 film shows the predominant perovskite ABO3 structure for x = 0.2 and 0.3 for the annealing temperature of 650 °C under nitrogen ambient. The metal contact on top and silicon substrate at the bottom of the film forms a Metal-Ferroelectric-Semiconductor capacitor structure. In BaMnxTi1-xO3, the deposited film changes its structural and electrical properties as the concentration value of ‘x’ is changed. The crystal structure of the deposited film has been analysed by XRD. FESEM, EDS and XPS characterization of the film were carried out to discuss the change in the film structure with the change in the value of ‘x’. The Capacitor vs. Voltage (C–V), Current vs. Voltage (I–V), Charge vs. Voltage (Q–V), Endurance, PUND (Positive Up Negative Down) and dielectric study of the films are discussed. Memory window of 8.6 V and leakage current of few nA are obtained. The deposited ferroelectric film shows an endurance of ~ 1011 iteration cycle for the PUND pulse. The optimized doping molar concentration ‘x’ in BaMnxTi1-xO3 shows favourable results for ferroelectric non-volatile memory application with a low cost fabrication method.