Publication Type : Journal Article
Publisher : IJSER
Source : International Journal for Scientific and Engineering Research (IJSER) (ISSN 2229-5518), Vol. 3(5), pp. 270-274, 2012.
Campus : Chennai
School : School of Engineering
Center : Amrita Innovation & Research
Department : Electronics and Communication
Verified : Yes
Year : 2012
Abstract : This paper provides the extracted values of the parameters affecting the threshold voltage model of SOI MOSFET. The parameter extraction is done for BSIMSOI4.3 MOSFET model. The proposed procedure is designed to give the results based on the device characteristics data. Simulations are performed using the extracted parameters and finally it is compa red for extracted parameters and generic device parameters. The effect of body bias voltage on the threshold voltage is studied by using the extracted val ues. Finally we summarize the work with accurate study of extracted parameters in depicting their effect on the characteristics of device.
Cite this Research Publication : M.Muthulakshmi, L. Sheela, “Parameter Extraction for BSIMSOI4.3 MOSFET Model”, International Journal for Scientific and Engineering Research (IJSER) (ISSN 2229-5518), Vol. 3(5), pp. 270-274, 2012