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Performance Investigation of Metasurface Absorber Using CdTe and InAS for Terahertz Applications

Publication Type : Conference Paper

Publisher : Springer Nature Singapore

Source : Lecture Notes in Networks and Systems

Url : https://doi.org/10.1007/978-981-96-1267-3_2

Campus : Amaravati

School : School of Engineering

Department : Electronics and Communication

Year : 2025

Abstract : Metasurface absorbers are candidates for high-performance terahertz absorption due to their ability to control radiation at the subwavelength scale. This study aims to produce metasurface using CdTe and InAs materials and evaluate its properties and tunability for terahertz applications. Simulations involving magnetic field, thickness of metasurfaces and temperature are used to determine the absorption efficiency of the suggested metasurface absorber. The results reveal important insights into the performance of the proposed metasurface absorbers in the range of 2–10 THz. The proposed metasurface’s optimum dimensions exhibit dual-band effectiveness with absorptance exceeding 97%. The first band ranging between 4.18–4.32 THz displays absorptance around unity while the second band ranging between 6.89–7.44 THz shows the absorptance about 0.97 and tunability 1.77 THz. These findings could help to develop terahertz devices useful in imaging, information, and communications applications. Additionally, comparison of CdTe and InAs materials demonstrates their advantages and limitations, guiding the selection of suitable materials for specific THz devices. This research paves the way for the use of metasurface materials in various terahertz technologies, providing high performance and versatility.

Cite this Research Publication : Sivala Tharun Kumar, Yarramreddy Vijaya Lakshmi, Posa Teja Sree, Nishant Sharan, Mohit Kumar Singh, Performance Investigation of Metasurface Absorber Using CdTe and InAS for Terahertz Applications, Lecture Notes in Networks and Systems, Springer Nature Singapore, 2025, https://doi.org/10.1007/978-981-96-1267-3_2

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