Publication Type : Conference Proceedings
Publisher : ICAECC
Source : 2014 International Conference on Advances in Electronics, Computers and Communications (ICAECC) (IEEE) held on October 10, 2014, in Bangalore
Campus : Bengaluru
School : School of Engineering
Department : Electrical and Electronics
Year : 2014
Abstract : Impact ionisation MOSFET (IMOS) is a new and promising alternative for conventional MOSFET owing to its low subthreshold slope. With the aid of TCAD simulation tools and the resultant figures, the basic physics behind IMOS operation has been studied in this paper. The I d -V g curve resulting from this study having a subthreshold slope of 1.272mV/dec is also presented in the paper.
Cite this Research Publication : Study of Device Physics in Impact Ionisation MOSFET Using Synopsys TCAD Tools 2014 International Conference on Advances in Electronics, Computers and Communications (ICAECC) (IEEE) held on October 10, 2014, in Bangalore