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Effect of thermal annealing on structural and electrical properties of tio2 thin films

Publication Type : Journal Article

Publisher : Thin Solid Films

Source : Thin Solid Films, Volume 710, p.138262 (2020)

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Keywords : Cross-sectional transmission electron microscopy, current-voltage characteristics, Radio-frequency magnetron sputtering, thin film, Titanium dioxide

Campus : Bengaluru

School : School of Engineering

Department : Physics

Year : 2020

Abstract : TiO2 is a wide band gap semiconducting material which is known to have good photocatalytic properties. The orientational relationship between the thin film and the substrate plays an important role in transferring the photo generated electrons. Here, we have deposited TiO2 thin films at room temperature on clean Si(100) substrates using radio frequency magnetron sputtering technique. Surface morphology and quality of the thin film have been studied using scanning electron microscopy, Raman spectroscopy and X-ray diffractometry techniques. Structural changes due to annealing has been investigated by analyzing the specimen before and after annealing using cross section transmission electron microscopy technique. Electrical measurements have been performed on the surface as well as across the interface using a two-probe measurement system.

Cite this Research Publication : N. RM, GN, K., Gundanna, S. Kumar, and Bhatta, U. M., “Effect of thermal annealing on structural and electrical properties of tio2 thin films”, Thin Solid Films, vol. 710, p. 138262, 2020.

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