Publication

Abstract : The growing adoption of wide-bandgap-based power converters has led to an increased demand for high-frequency modulation techniques. This research addresses the critical need for efficient modulation strategies to enhance the performance and overall efficiency of power converters employing silicon carbide (SiC) semiconductors. The main challenge in the field of power electronics is to select the most suitable modulation technique for SiC-MOSFET, and Si-IGBT-based high-frequency voltage source converters (VSC). With SiC semiconductors offering high switching speeds and improved thermal characteristics, choosing the right modulation technique becomes a key consideration for maximizing the potential of these wide-bandap devices. This research article presents a comprehensive comparison of several modulation techniques applicable to VSCs using SiC-MOSFET and Si-IGBT semiconductors. The modulation techniques under consideration include Sine PWM with third harmonic injection (SPWM-THI), Space Vector PWM (SVPWM) with model predictive control, Sigma Delta Modulation, and Hexagonal Sigma Delta Modulation. result indications encompass a comprehensive evaluation of power losses, thermal behavior of Infineon FS03MR12A6MA1B (MOSFET) and FS380R12A6T4B (IGBT), DC bus utilization, total harmonic distortion (THD) assessment, and insights from experiments comparing SiC-MOSFET and IGBT-based VSC converters, shedding light on the efficiency impact of modulation techniques and semiconductor technologies, especially at high switching frequencies with rigorous simulations conducted using MATLAB/Simulink and PSIM.