Publication

Abstract : Herein we have described the preparation and UV photodetection properties of Antimony (Sb) doped Indium Sulfide (In2S3) thin films. The nebulizer spray pyrolysis method was used to deposit the undoped and Sb-doped In2S3 thin films onto glass substrates at 350 °C. The X-ray diffraction (XRD) analysis verified that all deposited films exhibited the cubic phase β-In2S3 structure, with the highest crystallinity observed in the 3 wt% Sb-doped film. The morphological analysis showed densely packed, relatively larger grains in the 3 wt% Sb-doped In2S3 thin film. From UV–Vis investigation, it was observed that Sb doping enhanced optical absorption. The key parameters of the photodetectors were determined by Current-Voltage and Current-Time measurements. Among the fabricated photodetectors, the 3 wt% Sb-doped In2S3 thin film exhibited remarkable performance, with calculated Responsivity (R) of 1.020 A/W, Detectivity (D∗) of 32.5 × 1010 Jones, and External Quantum Efficiency (EQE) of 346 %. The photo-response investigation provided rise and fall times of 0.43 s and 0.26 s respectively, for the 3 wt% Sb-doped sample. Additionally, the stability test demonstrates the durability, reliability and suitability of the photodetectors for long-term applications. The remarkable enhancement in photodetector properties achieved through Sb doping highlights the exceptional quality and potential of the 3 wt% Sb-doped In2S3 thin films, setting a new standard for performance in advanced UV detection applications.