Publication Type : Journal Article
Publisher : SPIE
Source : Nanophotonics VII
Url : https://doi.org/10.1117/12.2304310
Campus : Faridabad
School : School of Artificial Intelligence
Year : 2018
Abstract : This paper focus on the theoretical investigation of quantum confined Stark effect (QCSE) in strain compensated SiGeSn/GeSn single quantum well (QW). Eigen energies in presence of electric field, for Г valley conduction band (Г- CB) and heavy hole band (HH)) are obtained from the self consistent solution of coupled Schrödinger and Poisson equations by finite difference method. Absorption coefficient considering excitonic effect for direct transition of HH band to Г valley is calculated. A significant shift in absorption peak towards longer wavelengths is observed.
Cite this Research Publication : Lokendra Singh, Prakash Pareek, Nishit Malviya, Jitendra Kumar Mishra, Theoretical investigation of electro-absorption in strain compensated Tin doped group IV alloy based quantum well, Nanophotonics VII, SPIE, 2018, https://doi.org/10.1117/12.2304310