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Publications
Analysis of FDSOI-Negative Capacitance MOSFET with Respect to Different Oxide Thickness and Temperatures

Citation : Analysis of FDSOI-Negative Capacitance MOSFET with Respect to Different Oxide Thickness and Temperat ...

Publisher :IEEE

Publications
Design and Comparison of Wideband Cascode Low Noise Amplifier using GAA-JLFET and GAA-NC-JLFET for RFIC Applications

Citation : Design and Comparison of Wideband Cascode Low Noise Amplifier using GAA-JLFET and GAA-NC-JLFET for R ...

Publisher :IEEE

Publications
Design and Modeling of a Label-free JLTFETBased Biosensor for Enhanced Sensitivity

Citation : Design and Modeling of a Label-free JLTFETBased Biosensor for Enhanced Sensitivity P Raut, U Nanda, ...

Publisher :IEEE

Publications
Study on the impact of CuI as Hole Transport Layer (HTL) for CZTS-based Solar Cell PK Dakua

Citation : Study on the impact of CuI as Hole Transport Layer (HTL) for CZTS-based Solar Cell PK Dakua, DK Pand ...

Publisher :IEEE

Publications
Effects of trap density on drain current LFN and its model development for E-mode GaN MOS-HEMT

Citation : Panda, D. K., and T. R. Lenka. "Effects of trap density on drain current LFN and its model developme ...

Publisher :ScienceDirect

Publications
Oxide thickness dependent compact model of channel noise for E-mode AlGaN/GaN MOS-HEMT

Citation : Panda, D. K., and T. R. Lenka. "Oxide thickness dependent compact model of channel noise for E-mode ...

Publisher :ScienceDirect

Publications
Microwave frequency small-signal equivalent circuit parameter extraction for AlInN/GaN MOSHEMT

Citation : Amarnath, G., D. K. Panda, and T. R. Lenka. "Microwave frequency small‐signal equivalent circuit p ...

Publications
Compact thermal Noise Model for Enhancement Mode N-polar GaN MOS-HEMT including 2DEG density solution with two sub-bands

Citation : Panda, Deepak Kumar, and Trupti Ranjan Lenka. "Compact thermal noise model for enhancement mode N-po ...

Publications
Modeling and Simulation of DC and microwave characteristics of AlInN(AlGaN)/AlN/GaN MOSHEMTs with different Gate Lengths

Citation : Amarnath, G., D. K. Panda, and T. R. Lenka. "Modeling and simulation of DC and microwave characteris ...

Publisher :Wiley Online Library

Publications
Small-signal model parameter extraction of E-mode N-polar GaN MOS-HEMT using optimization algorithms and its comparison

Citation : Panda, D. K., G. Amarnath, and T. R. Lenka. "Small-signal model parameter extraction of E-mode N-pol ...

Publisher :IOPScience

Publications
Linearity Improvement in E-mode Ferroelectric GaN MOS-HEMT using Dual Gate Technology

Citation : Panda, Deepak Kumar, and Trupti Ranjan Lenka. "Linearity improvement in E-mode ferroelectric GaN MOS ...

Publications
The Dawn of Ga2O3 HEMTs for High Power Electronics-A Review

Citation : Singh, R., T. R. Lenka, D. K. Panda, R. T. Velpula, B. Jain, H. Q. T. Bui, and H. P. T. Nguyen. "The ...

Publisher :Science Direct

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