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Dr. Deepak Kumar Panda

Associate Professor, Electronics and Communication Engineering, Amrita School of Engineering, Amaravati

Qualification: B-Tech, M.Tech, Ph.D
p_deepakkumar@av.amrita.edu
ORCID
Google Scholar Profile
Scopus ID
Research Interest: Modeling and Simulation Nano Devices, Bio Sensing, Nanoelectronics and Nanotechnology, VLSI Design and Technology, Solar Photovoltaics

Bio

Dr. Deepak Kumar Panda, currently working as an Associate Professor in ECE department at Amrita Vishwa Vidyapeetham University, Amaravati, Andhra Pradesh. Before that, he worked as Associate Professor in the School of Electronics at VIT-AP University, Andhra Pradesh, India. He has done Ph.D. in Semiconductor Device Modelling from NIT Silchar, India, M-Tech in ECE from IIT Kharagpur, Kharagpur, India, and B.Tech. in Electronics and Communications Engineering from National Institute of Science and Technology ,Brahmapur Odisha . He has guided 5 Ph.D. scholars and 4 M.Tech. scholars under his supervision. He has published more than 40 research articles in SCI indexed scientific journals.He is an IEEE senior member. He has more than 19 years of teaching and research experience.

Publications

Journal Article

Year : 2023

Performance Analysis of GaN-FINFET for RFIC Application with Respect to Different FinWidth’s

Cite this Research Publication : Reddy, MN, Panda, DK. Performance analysis of GaN-FINFET for RFIC application with respect to different FinWidth's. Int J Numer Model. 2023;e3098. doi:10.1002/jnm.3098 (SCI )

Year : 2023

Dependence of RF/analog and linearity parameters on ferroelectric layer thickness in ferroelectric tunnel junction dual material double gate (FTJ-DMDG) TFET

Cite this Research Publication : Saha, R., Panda, D. K., & Goswami, R. (2023). Dependence of RF/analog and linearity parameters on ferroelectric layer thickness in ferroelectric tunnel junction dual material double gate (FTJ-DMDG) TFET. Ferroelectrics, 602(1), 204-214. (SCI)

Year : 2023

Analysis of Various Hole Transport Layers (HTLs) on the Performance of CZTS- Solar Cell

Cite this Research Publication : Pratap Kumar Dakua and Deepak Kumar Panda” Analysis of various hole transport layers (HTLs) on the performance of CZTS- solar cell” 2023 Phys. Scr. 98 035110DOI 10.1088/1402-4896/acbbad (SCI )

Publisher : IOP Science

Year : 2023

Investigation on RF/Analog Performance in SiGe Pocket n-Tunnel FET

Cite this Research Publication : Rajesh Saha, Deepak Kumar Panda, Rupam Goswami,” Investigation on RF/Analog Performance in SiGe Pocket n-Tunnel FET”, IETE Journal of Research, 2023(SCI )

Publisher : IETE Journal of Research

Year : 2023

Recent Trends on Junction- Less Field Effect Transistors in Terms of Device Topology, Modeling, and Application

Cite this Research Publication : Pratikhya Raut, Umakanta Nanda, Deepak Kumar Panda,” Recent Trends on Junction- Less Field Effect Transistors in Terms of Device Topology, Modeling, and Application” ECS Journal of Solid State Science and Technology, 2023 DOI 10.1149/2162- 8777/acc35a (SCI )

Publisher : ECS Journal of Solid State Science and Technology

Year : 2023

Performance Analysis of Hetero-dielectric-Based MoS2 FET with Respect to Different Channel Lengths and High K-Values for Dielectric-Modulated Biosensor Application

Cite this Research Publication : Kumar, V.P., Panda, D.K. Performance Analysis of Hetero-dielectric-Based MoS2 FET with Respect to Different Channel Lengths and High K-Values for Dielectric-Modulated Biosensor Application. Braz J Phys 53, 68 (2023). https://doi.org/10.1007/s13538-023- 01285-x(SCI )

Publisher : Braz J Phys

Year : 2023

Analytical drain Current Model Development of Twin Gate TFET in Subthreshold and Super Threshold Regions

Cite this Research Publication : Raut, P., Nanda, U., & Panda, D. K. (2023). Analytical drain current model development of twin gate TFET in subthreshold and super threshold regions. Microelectronics Journal, 135, 105761. (SCI )

Publisher : Elsevier

Year : 2023

Numerical Simulation for the High Efficient Performance Signature of TO/ZnO/In2S3/WS2/CZTS based Solar Cell Structure

Cite this Research Publication : Dakua, P. K., Panda, D. K., Altahan, B. R., Smirani, L. K., Hossain, M. D., & Rashed, A. N. Z. (2023). Numerical simulation for the high efficient performance signature of TO/ZnO/In2S3/WS2/CZTS based solar cell structure. Bulletin of Materials Science, 46(2), 1-9. (SCI )

Publisher : Bulletin of Materials Science

Year : 2023

Improving the efficiency of ZnO/WS2/CZTS1 solar cells using CZTS2 as BSF layer by SCAPS-1D numerical simulation

Cite this Research Publication : Pratap Kumar Dakua and Deepak Kumar Panda” Improving the efficiency of ZnO/WS2/CZTS1 solar cells using CZTS2 as BSF layer by SCAPS-1D numerical simulation” 2023 Phys. Scr. DOI : 10.1088/1402-4896/ace13c (SCI )

Publisher : IOP Journals

Year : 2022

Analytical Modeling of I–V Characteristics using 2D Poisson equations in AlN/β-Ga2O3 HEMT

Cite this Research Publication : R. Singh, T.R. Lenka, D.K. Panda, H.P.T. Nguyen, N. El I. Boukortt, G. Crupi, Analytical modeling of I–V characteristics using 2D Poisson equations in AlN/β-Ga2O3 HEMT,Materials Science in Semiconductor Processing,Volume 145,2022, 106627(SCI )

Publisher : Science Direct

Year : 2022

Review—Next Generation 2D Material Molybdenum Disulfide (MoS2): Properties, Applications and Challenges

Cite this Research Publication : Vydha Pradeep Kumar and Deepak Kumar Panda “Review—Next Generation 2D Material Molybdenum Disulfide (MoS2): Properties, Applications and Challenges” ECS Journal of Solid State Science and Technology, Volume 11, Number 3,2022(SCI )

Publisher : IOPScience

Year : 2022

A Comprehensive Review on FinFET in Terms of its Device Structureand Performance Matrices

Cite this Research Publication : M. Nomitha Reddy & Deepak Kumar Panda “ A Comprehensive Review on FinFET in Terms of its Device Structureand Performance Matrices”Silicon,2022 DOI: https://doi.org/10.1007/s12633-022-01929-8 (SCI )

Year : 2022

Analytical Modelling for Surface Potential of Dual Material Gate Overlapped-on-drain TFET(DM-DMG-TFET) for label-free Biosensing Application

Cite this Research Publication : Nelaturi NagendraReddy, Deepak KumarPanda and RajeshSaha “Analytical modelling for surface potential of dual material gate overlapped-on-drain TFET(DM-DMG-TFET) for label-free biosensing application” AEUE - International Journal of Electronics and Communications, -Apr-2022DOI: https://doi.org/10.1016/j.aeue.2022.154225 (SCI )

Publisher : Elsevier

Year : 2022

Design and Investigation of Dielectric Modulated Triple Metal gate-oxide-stack Z-shaped Gate Horizontal Pocket TFET Device as a Label-free Biosensor

Cite this Research Publication : In this article, a dielectric modulated triple metal gate-oxide-stack Z-shaped gate horizontal source pocket tunnel field-effect transistor (DM-TMGOS-ZHP-TFET) structure has been investigated for the application of label free-biosensor. This work explores the advantage of gate work function engineering along with the gate-oxide-stack approach for the ZHP-TFET for the first time. An asymmetric nano-cavity is created adjacent to the source-channel junction to immobilize the target biomolecules conjugation to the proposed device. The sensitivity of the device is thoroughly investigated in terms of average subthreshold swing (SS), threshold voltage (Vth) and the switching ratio (Ion/Ioff) of the proposed device with the variation of the dielectric constant value inside the nano-gap under the gate electrode. The device characteristics are investigated with different combinations of metal work functions to match the desired feature and sensitivity of the device. In addition, the sensitivity analysis of the proposed device is analyzed in the presence of both positive and negative charged biomolecules in the cavity region to study the charge effect on label-free detection of the device. A comparative study is conducted between a single metal gate (SMG) ZHP-DM-TFET biosensor with the DM-TMGOS-ZHP-TFET biosensor explores the advantage of gate-work function engineering with a gate-oxide-stack approach. Interestingly the DM-TMGOS-ZHP-TFET biosensor shows superior results with a high current ratio sensitivity of 103 which is ten times more than the SMG-ZHP-DM-TFET biosensor and this device also exhibits low subthreshold characteristics.

Publisher : IOP Science

Year : 2022

Analytical Modeling of Dielectric Modulated Negative Capacitance MoS2 field Effect Transistor for Next-generation Label-free Biosensor

Cite this Research Publication : Panda, DK, Lenka, TR, Singh, R, Goyal, V, Boukortt, NEI, Nguyen, HPT. Analytical modeling of dielectric modulated negative capacitance MoS2 field effect transistor for next-generation label-free biosensor. Int J Numer Model. 2022;e3060. doi:10.1002/jnm.3060 (SCI )

Publisher : Analytical Modeling of Dielectric Modulated Negative Capacitance MoS2 field Effect Transistor for Next-generation Label-free Biosensor

Year : 2022

Influence of Dopants in Buffer Layer on CZTS Solar cell Performance

Cite this Research Publication : Dakua, P. K., & Panda, D. K. (2022). Influence of dopants in buffer layer on CZTS solar cell performance. Emerging Materials Research, 1-12. (SCI )

Publisher : ICE Virtual Library

Year : 2022

Dependence of RF/analog and Linearity Parameters on Ferroelectric Layer Thickness in Ferroelectric Tunnel Junction Dual Material Double Gate (FTJ-DMDG) TFET

Cite this Research Publication : Saha, R., Panda, D. K., & Goswami, R. (2023). Dependence of RF/analog and linearity parameters on ferroelectric layer thickness in ferroelectric tunnel junction dual material double gate (FTJ-DMDG) TFET. Ferroelectrics, 602(1), 204-214. (SCI )

Year : 2022

RF with Linearity and non-linearity Parameter Analysis of Gate all Around Negative Capacitance Junction less FET (GAA-NC-JLFET) for Different Ferroelectric Thickness

Cite this Research Publication : Raut, P., Nanda, U., & Panda, D. K. (2022). RF with linearity and non-linearity parameter analysis of gate all around negative capacitance junction less FET (GAA-NC-JLFET) for different ferroelectric thickness. Physica Scripta, 97(10), 105809. (SCI )

Publisher : IOP Science

Year : 2022

Analysis on Electrical Parameters Including Temperature and Interface trap Charges in Gate Overlap Ge Source Step Shape Double Gate TFET

Cite this Research Publication : Saha, R., Goswami, R., & Panda, D. K. (2022). Analysis on electrical parameters including temperature and interface trap charges in gate overlap Ge source step shape double gate TFET. Microelectronics Journal, 130, 105629. (SCI )

Publisher : Elsevier

Year : 2021

A Comprehensive Review on High Electron Mobility Transistor (HEMT) Based Biosensors: Recent Advances and Future Prospects and its Comparison with Si-Based Biosensor

Cite this Research Publication : Hemaja, V., and D. K. Panda. "A comprehensive review on high electron mobility transistor (HEMT) Based biosensors: recent advances and future prospects and its comparison with Si-based biosensor." Silicon (2021): 1-14. (SCI )

Publisher : Springer

Year : 2021

Dielectric Modulated Enhancement Mode N-Polar GaN MIS-HEMT Biosensor for Label Free Detection

Cite this Research Publication : Hemaja, V., and D. K. Panda. "Dielectric Modulated Enhancement Mode N-Polar GaN MIS-HEMT Biosensor for Label Free Detection." ECS Journal of Solid State Science and Technology 10.3 (2021): 035006. (SCI )

Publisher : IOPScience

Year : 2021

Analysis on effect of lateral straggle on analog, high frequency and DC parameters in Ge‐source DMDG TFET

Cite this Research Publication : Saha, Rajesh, Deepak Kumar Panda, Rupam Goswami, Brinda Bhowmick, and Srimanta Baishya. "Analysis on effect of lateral straggle on analog, high frequency and DC parameters in Ge‐source DMDG TFET." International Journal of RF and Microwave Computer‐Aided Engineering 31, no. 4 (2021): e22579. (SCI )

Publisher : Wiley Online Library

Year : 2021

DC and RF/analog parameters in Ge-source split drain-ZHP-TFET: Drain and pocket engineering technique

Cite this Research Publication : Saha, R, Panda, DK, Goswami, R, Bhowmick, B, Baishya, S. DC and RF/analog parameters in Ge-source split drain-ZHP-TFET: Drain and pocket engineering technique. Int J Numer Model. 2021;e2967. doi:10.1002/jnm.2967(SCI )

Publisher : Wiley Online Library

Year : 2021

Nanowire Gate all Around-TFET- based Biosensor by Considering Ambipolar Transport

Cite this Research Publication : Reddy, N. Nagendra, and Deepak Kumar Panda. "Nanowire gate all around-TFET- based biosensor by considering ambipolar transport." Applied Physics A 127.9 (2021): 1-9. (SCI )

Publisher : Springer

Year : 2021

Performance Analysis of Z‐shaped Gate Dielectric Modulated (DM) Tunnel field‐effect transistor‐(TFET) based biosensor with extended horizontal N+ pocket

Cite this Research Publication : Reddy, N. Nagendra, and Deepak Kumar Panda. "Performance analysis of Z‐shaped gate dielectric modulated (DM) tunnel field‐effect transistor‐(TFET) based biosensor with extended horizontal N+ pocket." International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (2021): e2908. (SCI )

Publisher : Wiley Online Library

Year : 2021

Investigation of β-Ga2O3- based HEMTs using 2D Simulations for Low Noise Amplification and RF Applications

Cite this Research Publication : Singh, R., T. R. Lenka, D. K. Panda, and H. P. T. Nguyen. "Investigation of β-Ga2O3- based HEMTs using 2D Simulations for low noise amplification and RF applications." Engineering Research Express 3, no. 3 (2021): 035042. (ESCI, Scopus )

Publisher : IOPScience

Year : 2020

The Dawn of Ga2O3 HEMTs for High Power Electronics-A Review

Cite this Research Publication : Singh, R., T. R. Lenka, D. K. Panda, R. T. Velpula, B. Jain, H. Q. T. Bui, and H. P. T. Nguyen. "The dawn of Ga2O3 HEMTs for high power electronics-A review." Materials Science in Semiconductor Processing 119 (2020): 105216. (SCI )

Publisher : Science Direct

Year : 2020

Rapid Detection of Biomolecules in a Junction Less Tunnel Field-Effect Transistor (JL-TFET) Biosensor

Cite this Research Publication : Peesa, Rohit Bhargav, and Deepak Kumar Panda. "Rapid Detection of Biomolecules in a Junction Less Tunnel Field-Effect Transistor (JL-TFET) Biosensor." Silicon (2021): 1-7. (SCI )

Publisher : Springer

Year : 2020

A Comprehensive Review on Tunnel field-effect Transistor (TFET) based Biosensors: Recent Advances and Future Prospects on Device Structure and sensitivity

Cite this Research Publication : Reddy, N. Nagendra, and Deepak Kumar Panda. "A comprehensive review on tunnel field-effect transistor (TFET) based biosensors: recent advances and future prospects on device structure and sensitivity." Silicon (2020): 1-16. (SCI )

Publisher : Springer

Year : 2020

Simulation Study of Dielectric Modulated Dual Material Gate TFET Based Biosensor by Considering Ambipolar Conduction

Cite this Research Publication : Reddy, N. Nagendra, and Deepak Kumar Panda. "Simulation Study of Dielectric Modulated Dual Material Gate TFET Based Biosensor by Considering Ambipolar Conduction." Silicon (2020): 1-7. (SCI )

Publisher : Springer

Year : 2020

Single and double-gate based AlGaN/GaN MOS-HEMTs for the design of low-noise amplifiers: a comparative study

Cite this Research Publication : Panda, Deepak Kumar, Rajan Singh, Trupti Ranjan Lenka, Thi Tan Pham, Ravi Teja Velpula, Barsha Jain, Ha Quoc Thang Bui, and Hieu Pham Trung Nguyen. "Single and double-gate based AlGaN/GaN MOS-HEMTs for the design of low-noise amplifiers: a comparative study." IET Circuits, Devices & Systems 14, no. 7 (2020): 1018-1025. (SCI )

Year : 2019

Linearity Improvement in E-mode Ferroelectric GaN MOS-HEMT using Dual Gate Technology

Cite this Research Publication : Panda, Deepak Kumar, and Trupti Ranjan Lenka. "Linearity improvement in E-mode ferroelectric GaN MOS-HEMT using dual gate technology." Micro & Nano Letters 14.6 (2019): 618-622. (SCI )

Year : 2018

Microwave frequency small-signal equivalent circuit parameter extraction for AlInN/GaN MOSHEMT

Cite this Research Publication : Amarnath, G., D. K. Panda, and T. R. Lenka. "Microwave frequency small‐signal equivalent circuit parameter extraction for AlInN/GaN MOSHEMT." International Journal of RF and Microwave Computer‐Aided Engineering 28.2 (2018): e21179. (SCI )

Year : 2018

Compact thermal Noise Model for Enhancement Mode N-polar GaN MOS-HEMT including 2DEG density solution with two sub-bands

Cite this Research Publication : Panda, Deepak Kumar, and Trupti Ranjan Lenka. "Compact thermal noise model for enhancement mode N-polar GaN MOS-HEMT including 2DEG density solution with two sub-bands." IET Circuits, Devices & Systems 12.6 (2018): 810-816. (SCI )

Year : 2018

Modeling and Simulation of DC and microwave characteristics of AlInN(AlGaN)/AlN/GaN MOSHEMTs with different Gate Lengths

Cite this Research Publication : Amarnath, G., D. K. Panda, and T. R. Lenka. "Modeling and simulation of DC and microwave characteristics of AlInN (AlGaN)/AlN/GaN MOSHEMTs with different gate lengths." International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 32.1 (2019): e2456. (SCI )

Publisher : Wiley Online Library

Year : 2018

Small-signal model parameter extraction of E-mode N-polar GaN MOS-HEMT using optimization algorithms and its comparison

Cite this Research Publication : Panda, D. K., G. Amarnath, and T. R. Lenka. "Small-signal model parameter extraction of E-mode N-polar GaN MOS-HEMT using optimization algorithms and its comparison." Journal of Semiconductors 39.7 (2018): 074001. (ESCI, Scopus )

Publisher : IOPScience

Year : 2017

Modeling and simulation of enhancement mode p-GaN Gate AlGaN/GaN HEMT for RF circuit switch applications

Cite this Research Publication : Panda, D. K., and T. R. Lenka. "Modeling and simulation of enhancement mode p-GaN Gate AlGaN/GaN HEMT for RF circuit switch applications." Journal of Semiconductors 38.6 (2017): 064002. (ESCI, Scopus )

Publisher : IOPScience

Year : 2017

Effects of trap density on drain current LFN and its model development for E-mode GaN MOS-HEMT

Cite this Research Publication : Panda, D. K., and T. R. Lenka. "Effects of trap density on drain current LFN and its model development for E-mode GaN MOS-HEMT." Superlattices and Microstructures 112 (2017): 374-382. (SCI )

Publisher : ScienceDirect

Year : 2017

Oxide thickness dependent compact model of channel noise for E-mode AlGaN/GaN MOS-HEMT

Cite this Research Publication : Panda, D. K., and T. R. Lenka. "Oxide thickness dependent compact model of channel noise for E-mode AlGaN/GaN MOS-HEMT." AEU-International Journal of Electronics and Communications 82 (2017): 467-473. (SCI )

Publisher : ScienceDirect

Conference Proceedings

Year : 2023

Implementation of Zinc Sulfide (ZnS) as a Suitable Buffer Layer for CZTS Solar Cell from Numerical Analysis

Cite this Research Publication : Dakua, P.K., Panda, D.K. (2023). Implementation of Zinc Sulfide (ZnS) as a Suitable Buffer Layer for CZTS Solar Cell from Numerical Analysis. In: Lenka, T.R., Misra, D., Fu, L. (eds) Micro and Nanoelectronics Devices, Circuits and Systems. Lecture Notes in Electrical Engineering, vol 904. Springer, Singapore. https://doi.org/10.1007/978-981-19- 2308-1_2(Scopus )

Publisher : Springer

Year : 2023

Analysis of FDSOI-Negative Capacitance MOSFET with Respect to Different Oxide Thickness and Temperatures

Cite this Research Publication : Analysis of FDSOI-Negative Capacitance MOSFET with Respect to Different Oxide Thickness and Temperatures VP Kumar, DK Panda - 2023 IEEE Devices for Integrated Circuit (DevIC), 2023

Publisher : IEEE

Year : 2023

Design and Comparison of Wideband Cascode Low Noise Amplifier using GAA-JLFET and GAA-NC-JLFET for RFIC Applications

Cite this Research Publication : Design and Comparison of Wideband Cascode Low Noise Amplifier using GAA-JLFET and GAA-NC-JLFET for RFIC Applications P Raut, U Nanda, DK Panda, CC Hsu - 2023 3rd International conference on Artificial …, 2023

Publisher : IEEE

Year : 2023

Design and Modeling of a Label-free JLTFETBased Biosensor for Enhanced Sensitivity

Cite this Research Publication : Design and Modeling of a Label-free JLTFETBased Biosensor for Enhanced Sensitivity P Raut, U Nanda, DK Panda - 2023 IEEE Devices for Integrated Circuit (DevIC), 2023

Publisher : IEEE

Year : 2023

Study on the impact of CuI as Hole Transport Layer (HTL) for CZTS-based Solar Cell PK Dakua

Cite this Research Publication : Study on the impact of CuI as Hole Transport Layer (HTL) for CZTS-based Solar Cell PK Dakua, DK Panda, A Laidouci, S Sahu - 2023 IEEE Devices for Integrated Circuit (DevIC), 2023

Publisher : IEEE

Year : 2022

Comparative Analysis of Different FET-Based Biosensor: Recent Advances in Device Structure and Sensitivity

Cite this Research Publication : Teja, Pamulapati, N. Nagendra Reddy, and Deepak Kumar Panda. "Comparative Analysis of Different FET-Based Biosensor: Recent Advances in Device Structure and Sensitivity." Micro and Nanoelectronics Devices, Circuits and Systems (2022): 79-90. (Scopus )

Publisher : Springer

Year : 2022

Rapid Detection of Biomolecules Using Dielectric Modulated Ferroelectric GaN HEMT

Cite this Research Publication : Hemaja, V., and Deepak Kumar Panda. "Rapid Detection of Biomolecules Using Dielectric Modulated Ferroelectric GaN HEMT." Micro and Nanoelectronics Devices, Circuits and Systems. Springer, Singapore, 2022. 193-199. (Scopus )

Publisher : Springer

Year : 2022

Dielectric Modulated Double Gate Hetero Dielectric TFET (DM-DGH-TFET) Biosensors: Gate Misalignment Analysis on Sensitivity

Cite this Research Publication : N. N. Reddy and D. K. Panda, "Dielectric Modulated Double Gate Hetero Dielectric TFET (DM-DGH-TFET) Biosensors: Gate Misalignment Analysis on Sensitivity," 2022 2nd International Conference on Artificial Intelligence and Signal Processing (AISP), 2022, pp. 1-8, doi: 10.1109/AISP53593.2022.9760561. (Scopus )

Publisher : IEEE

Year : 2022

Simulation Analysis of Different TMDC Materials and their Performances

Cite this Research Publication : V. P. Kumar and D. K. Panda, "Simulation Analysis of Different TMDC Materials and their Performances," 2022 2nd International Conference on Artificial Intelligence and Signal Processing (AISP), 2022, pp. 1-5, doi: 10.1109/AISP53593.2022.9760597. (Scopus )

Publisher : IEEE

Year : 2022

Performance Analysis of Double Gate Junctionless TFET with Respect to Different High-k Materials and Oxide Thickness

Cite this Research Publication : P. Raut, U. Nanda, D. K. Panda and H. P. T. Nguyen, "Performance Analysis of Double Gate Junctionless TFET with respect to different high-k materials and oxide thickness," 2022 2nd International Conference on Artificial Intelligence and Signal Processing (AISP), 2022, pp. 1-5, doi: 10.1109/AISP53593.2022.9760584. (Scopus )

Publisher : IEEE

Year : 2022

Design of 12T SRAM with improved Stability for IOT Application

Cite this Research Publication : M. N. Reddy and D. Panda, "Design of 12T SRAM with improved stability for IOT application," 2022 2nd International Conference on Artificial Intelligence and Signal Processing (AISP), 2022, pp. 1- 6, doi: 10.1109/AISP53593.2022.9760666. (Scopus )

Publisher : IEEE

Year : 2021

Effect of Drain Engineering on DC and RF Characteristics in Ge-source SD-ZHP-TFET

Cite this Research Publication : Saha, Rajesh, Deepak Kumar Panda, Rupam Goswami, Brinda Bhowmick, and Srimanta Baishya. "Effect of Drain Engineering on DC and RF Characteristics in Ge-source SD- ZHP-TFET." In 2021 Devices for Integrated Circuit (DevIC), pp. 517-520. IEEE, 2021. (Scopus )

Publisher : IEEE

Book Chapter

Year : 2023

HEMT for Biosensing Applications

Cite this Research Publication : Panda, D.K., Lenka, T.R. (2023). HEMT for Biosensing Applications. In: Lenka, T.R., Nguyen, H.P.T. (eds) HEMT Technology and Applications. Springer Tracts in Electrical and Electronics Engineering. Springer, Singapore. https://doi.org/10.1007/978-981-19- 2165-0_16

Publisher : Springer

Year : 2021

Effect of Dielectric Material on Electrical Parameters Present near Source Region in Hetero Gate Dielectric TFET

Cite this Research Publication : Rajesh Saha, Suman Kumar Mitra, Deepak Kumar Panda. " Effect of Dielectric Material on Electrical Parameters Present near Source Region in Hetero Gate Dielectric TFET." In Nanoelectronic Devices for Hardware and Software Security, pp. 201-215. CRC Press, 2021.

Publisher : CRC Press

Year : 2021

Ga2O3 Based Heterostructure FETs (HFETs) for Microwave and Millimeter-Wave Applications

Cite this Research Publication : Singh, R., T. R. Lenka, D. Panda, R. T. Velpula, B. Jain, H. Q. T. Bui, and H. P. T. Nguyen. "Ga 2 O 3 Based Heterostructure FETs (HFETs) for Microwave and Millimeter- Wave Applications." In Emerging Trends in Terahertz Engineering and System Technologies, pp. 209-227. Springer, Singapore, 2021.

Publisher : Springer

Year : 2020

RF performance of ultra-wide bandgap HEMTs

Cite this Research Publication : Singh, Rajan, T. R. Lenka, D. Panda, R. T. Velpula, B. Jain, H. Q. T. Bui, and H. P. T. Nguyen. "RF performance of ultra-wide bandgap HEMTs." In Emerging Trends in Terahertz Solid-State Physics and Devices: Sources, Detectors, Advanced Materials, and Light-matter Interactions, pp. 49-63. Springer Singapore, 2020.

Publisher : Springer

Patents

Year : 2023

Thin Film Silver Dopped CZTS Used as Back Surface Field

Cite this Research Publication : Pratap Kumar Dakua, Deepak Kumar Panda”THIN FILM SILVER DOPPED CZTS USED AS BACK SURFACE FIELD “Application No.: 202241073143Patent Publication date: 03/02/2023

Year : 2021

Quarter Cavity Extended Source Vertical Dielectric Modulated TFET (QESV-DM-TFET) Based Biosensor

Cite this Research Publication : Reddy, N. N. and Panda, D. K. “Quarter Cavity Extended Source Vertical Dielectric Modulated TFET (QESV-DM-TFET) Based Biosensor”, Indian Patent Application No 202141057906, Filed on Sep 30th 2021, Published on Dec 24th, 2021. (published)

Year : 2021

Z-Shaped Gate Horizontal Pocket Dielectric Modulated Tunnel FET (ZHP-DMTFET) Based Biosensor

Cite this Research Publication : Reddy, N. Nagendra, and Deepak Kumar Panda “Z-SHAPED GATE HORIZONTAL POCKET DIELECTRIC MODULATED TUNNEL FET (ZHP-DMTFET) BASED BIOSENSOR” Indian Patent, Application No.202141026720 A, Publication Date : 02/07/2021

Publisher : Indian Patent, Application No.202141026720 A

Qualification
  • 2018: Ph.D.
    NIT Silchar ,India
  • 2014: M.Tech 
    IIT Kharagpur, Kharagpur,India
  • 2010: B.Tech.
    Electronics    and    Communication    Engineering,    National Institute of Science and Technology, BPUT, Odisha India
FDP/Conference Conducted
  • General Chair of 3rd IEEE International Conference on Artificial Intelligence and Signal Processing 2023(AISP23 ) at VITAP University from 18th-20th March 2023
  • General Chair of 2nd IEEE International Conference on Artificial Intelligence and Signal Processing 2022(AISP22) at VITAP University from 12th-14th Jan 2022
  • Organized 1st IEEE International Conference on Artificial Intelligence and Signal Processing 2020(AISP20) at VITAP University from 10th-12th Jan 2020(Technical Program Chair)
Awards/Reviewer

Membership of Professional Bodies

  • IEEE (Institute of Electrical and Electronics Engineering) Senior Member/Customer Number: 93577425

Awards

  • IEEE Senior Member from June 2022

Reviewer of Journals & Conferences

  • Frequent Reviewer of IEEE Transactions Journals, IOP Journals, IJNM, Microelectronics Journal
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