Prof. Sasangan Ramanathan, Dean, School of Engineering, and Professor of Chemical Engineering at the School of Engineering, Coimbatore, as well as Dean Academics at the School of Computing, Haridwar, brings with him over 20 years of international research, management, and leadership experience. Prof. Sasangan’s focus and dedication is in preparing the next generation graduates for challenges in science, engineering, technology and management. He represents the university’s commitment to excellence in teaching, learning, research and positive contribution to the society. He is a strong believer in an educational process that promotes creativity, innovation and entrepreneurship while providing the students with strong fundamentals. Prof. Sasangan Ramanathan holds a Ph. D. in Chemical Engineering from Clarkson University (USA), has served in various capacities in research and development in the US. Recently, he served as the Chief Technology Officer for a multi-million dollar company in the US in developing cutting edge technology for advanced semiconductor device fabrication.
He is well recognized by leading semiconductor device manufacturers like Samsung, SK Hynix, Fujitsu and Toshiba (to name a few). He has been an active member in defining the semiconductor technology roadmap, driving new product development,Besides an illustrious career in the semiconductor industry, Prof. Sasangan was also involved in developing novel catalytic materials aimed at reducing the emission of ozone depleting toxic gases. In addition to being an active researcher, he joined Amrita with strong leadership skills and management experience, leading strategic business development,managing alliances/collaborations with key industry partners/consortia & universities across the globe. Prof. Sasangan has a strong passion for innovation and creativity.
He has authored/co-authored over 45 publications in international journals and conferences and holds 12 patents. He also served on the International Technical Advisory committee in the American Vacuum Society’s topical conference on Atomic Layer Deposition. He is also an active participant and member of the advisory committee of topical conferences in Electrochemical Society and American Chemical Society and has chaired a number of international conference sessions.
| YEAR | DEGREE/PROGRAM | INSTITUTION |
|---|---|---|
| 1995 | PhD in Chemical Engineering | Clarkson University, Potsdam, NY, USA |
| 1991 | Postgraduate Degree | Clarkson University, Potsdam, NY, USA |
| 1989 | Undergraduate Degree | National Institute of Technology, Trichy, India |
| Year | Affiliation |
|---|---|
| April 2014 – Present | Dean, Faculty of Engineering, Amrita Vishwa Vidyapeetham Professor, Department of Chemical Engineering and Materials Science, School of Engineering, Amrita Vishwa Vidyapeetham |
| 2008 – 2014 | Chief Technology Officer, AIXTRON, Inc., Sunnyvale, CA USA |
| 2004 – 2008 | Vice President, Business Development & Technology, Genus, Inc. USA |
| 2001 – 2004 | Director, Technology, Genus, Inc. USA |
| 1999 – 2001 | Manager, Process Development, Novellus Systems, Inc. USA |
| 1995 – 1999 | Sr. Process Development Engineer, Quester Technology, Inc. USA |
Year : 2024
Cite this Research Publication : Krishnashree Achuthan, Sasangan Ramanathan, Sethuraman Srinivas, Raghu Raman, Advancing cybersecurity and privacy with artificial intelligence: current trends and future research directions, Frontiers in Big Data, Frontiers Media SA, 2024, https://doi.org/10.3389/fdata.2024.1497535
Publisher : Frontiers Media SA
Year : 2023
Cite this Research Publication : Krishnashree Achuthan, Vinith Kumar Nair, Robin Kowalski, Sasangan Ramanathan, Raghu Raman, Cyberbullying research — Alignment to sustainable development and impact of COVID-19: Bibliometrics and science mapping analysis, Computers in Human Behavior (ABDC-A, Scopus-Q1, IF-8.9), Volume 140, March 2023, 107566, DOI: 10.1016/j.chb.2022.107566
Publisher : Elsevier
Year : 2009
Cite this Research Publication : Y. Senzaki, Okuyama, Y., Kim, G., Kim, H. Young, Barelli, C., Lindner, J., Karim, Z., and Dr. Sasangan Ramanathan, “Highly Conformal ALD of ZrO2 at Higher Process Temperatures than the Conventinal TEMAZr-Based Process”, ECS Transactions, vol. 25, pp. 201–209, 2009.
Publisher : ECS Transactions
Year : 2007
Cite this Research Publication : J. Dalton, Kim, H. Young, Zhang, Z., Seidel, T., Karim, Z., and Dr. Sasangan Ramanathan, “High Performance ALD Reactor for High-k Films”, ECS Transactions, vol. 3, pp. 27–36, 2007.
Publisher : ECS Transactions, The Electrochemical Society
Year : 2006
Cite this Research Publication : Z. Karim, Biossiere, O., Lohe, C., Zhang, Z., Park, W., Manke, C., Baumann, P. K., Dalton, J., Dr. Sasangan Ramanathan, Lindner, J., and , “Advanced Metal Gate Electrode Options Compatible with ALD and AVD® HfSiOx-based Gate Dielectrics”, ECS Transactions, vol. 3, pp. 363–374, 2006.
Publisher : The Electrochemical Society
Year : 2005
Cite this Research Publication : X. Liu, Dr. Sasangan Ramanathan, Longdergan, A., Srivastava, A., Lee, E., Seidel, T. E., Barton, J. T., Pang, D., and Gordon, R. G., “ALD of Hafnium Oxide Thin Films from Tetrakis (ethylmethylamino) Hafnium and Ozone”, Journal of The Electrochemical Society, vol. 152, pp. G213–G219, 2005.
Publisher : Journal of The Electrochemical Society, The Electrochemical Society
Year : 2003
Cite this Research Publication : Tom Seidel, Londergan, A., Winkler, J., Liu, X., and Dr. Sasangan Ramanathan, “Progress and Opportunities in Atomic Layer Deposition”, vol. 46, pp. 67-70, 2003.
Year : 2002
Cite this Research Publication : M. F. Li H. Y. Yu, Dr. Sasangan Ramanathan, Cho, B. Jin, Yeo, C. C., Joo, M. S., Kwong, D. - L., Pan, J. S., Ang, C. H., and Zheng, J. Z., “EnergyGap and Band Alignment for (HfO2)x(Al2O3)1−x(HfO2)x(Al2O3)1−x on (100) Si”, Applied Physics Letters , vol. 81, pp. 376-378, 2002.
Publisher : Applied Physics Letters
Year : 2002
Cite this Research Publication : H. Y. Yu, Wu, N., Li, M. F., Chunxiang Zhu, Byung Jin Cho, Kwong, D. - L., Tung, C. H., Pan, J. S., Chai, J. W., Wang, W. D., Chi, D. Z., Ang, C. H., Zheng, J. Z., and Dr. Sasangan Ramanathan, “Thermal Stability of (HfO2)x(Al2O3)1−x on Si”, Applied Physics Letters, vol. 81, pp. 3618-3620, 2002.
Publisher : Applied Physics Letters
Year : 2002
Cite this Research Publication : A. Londergan, Dr. Sasangan Ramanathan, Rassiga,, Hinzay, R., Winkler, J., Velasco, H., Matthysse, L., Seidel, T. E., Ang, C. H., Yu, H. Y., and Li, M. F., “Process Optimization in Atomic Layer Deposition of High-k Oxides for Advanced Gate Stack Engineering”, Conference Proceedings, the Society for Solid State and Electrochemical Science and Technology. pp. 163-176, 2002.
Publisher : Society for Solid State and Electrochemical Science and Technology
Year : 1999
Cite this Research Publication : S. B. Desu, Vijay, D. P., Dr. Sasangan Ramanathan, Bhatt, H. D., and Tirumala, S., “Stresses in Sputtered RuOx Thin Films”, Thin Solid Films, vol. 350, pp. 21 - 29, 1999.
Publisher : Thin Solid Films
Year : 1999
Cite this Research Publication : S. T. Oyama, C. Yu, C., and Dr. Sasangan Ramanathan, “Transition Metal Bimetallic Oxycarbides: Synthesis, Characterization, and Activity Studies”, Journal of Catalysis, vol. 184, pp. 535 - 549, 1999.
Publisher : Journal of Catalysis
Year : 1998
Cite this Research Publication : P. C. Joshi, Dr. Sasangan Ramanathan, Desu, S. B., Stowell, S., and Sengupta, S., “Characterization of Ba0.6Sr0.4TiO3 Thin Films with Mg Additive Fabricated by Metalorganic Decomposition Technique”, Integrated Ferroelectrics, vol. 19, pp. 141-148, 1998.
Publisher : Taylor & Francis
Year : 1998
Cite this Research Publication : B. Dhandapani, Dr. Sasangan Ramanathan, Yu, C. C., Frühberger, B., Chen, J. G., and Oyama, S. T., “Synthesis, Characterization, and Reactivity Studies of Supported Mo2C with Phosphorus Additive”, Journal of Catalysis, vol. 176, pp. 61 - 67, 1998.
Publisher : Journal of Catalysis
Year : 1998
Cite this Research Publication : C. C. Yu, Dr. Sasangan Ramanathan, and Oyama, S. T., “New Catalysts for Hydroprocessing: Bimetallic Oxynitrides MI–MII–O–N (MI, MII=Mo, W, V, Nb, Cr, Mn, and Co): Part I. Synthesis and Characterization”, Journal of Catalysis, vol. 173, pp. 1 - 9, 1998.
Publisher : Journal of Catalysis
Year : 1998
Cite this Research Publication : Dr. Sasangan Ramanathan, Oyama, S. T., and C., C., “New Catalysts for Hydroprocessing: Bimetallic Oxynitrides MI-MII-O-N (MI, MII= Mo, W, V, Nb, Cr, Mn, and Co) Part II: Reactivity Studies”, Journal of Catalysis, pp. 10-16, 1998.
Publisher : Journal of Catalysis
Year : 1997
Cite this Research Publication : P. C. Joshi, Dr. Sasangan Ramanathan, Desu, S. B., and Stowell, S., “Microstructural and Electrical Characteristics of Rapid Thermally Processed (Ba1—xSrx)TiO3 Thin Films Prepared by Metalorganic Solution Deposition Technique”, physica status solidi (a), vol. 161, pp. 361-370, 1997.
Publisher : physica status solidi (a)
Year : 1997
Cite this Research Publication : Y. Zhu, Desu, S. B., Tingkai Li, Dr. Sasangan Ramanathan, and Nagata, M., “SrBi2Ta2O9 Thin Films made by Liquid Source Metal-organic Chemical Vapor Deposition”, Journal of Materials Research, vol. 12, pp. 783–792, 1997.
Publisher : Journal of Materials Research, Cambridge University Press
Year : 1997
Cite this Research Publication : C. C. Yu, Dr. Sasangan Ramanathan, Dhandapani, B., Chen, J. G., and S. Oyama, T., “Bimetallic Nb−Mo Carbide Hydroprocessing Catalysts: Synthesis, Characterization, and Activity Studies”, The Journal of Physical Chemistry B, vol. 101, pp. 512-518, 1997.
Publisher : The Journal of Physical Chemistry B
Year : 1995
Cite this Research Publication : S. T. Oyama, Dr. Sasangan Ramanathan, and Yu, C. C., “Synthesis and Reactivity of New Bimetallic Oxynitrides”, Preprints of Papers – American Chemical Society, Division of Fuel Chemsirty, vol. 998, 1995.
Publisher : Preprints of Papers – American Chemical Society, Division of Fuel Chemsirty
Year : 1995
Cite this Research Publication : Dr. Sasangan Ramanathan and Oyama, S. T., “New Catalysts for Hydroprocessing: Transition Metal Carbides and Nitrides”, The Journal of Physical Chemistry, vol. 99, pp. 16365-16372, 1995.
Publisher : The Journal of Physical Chemistry
Year : 1994
Cite this Research Publication : C. C. Yu, Dr. Sasangan Ramanathan, Sherif, F., and S. Oyama, T., “Structural, Surface, and Catalytic Properties of a New Bimetallic V-Mo Oxynitride Catalyst for Hydrodenitrogenation”, The Journal of Physical Chemistry, vol. 98, pp. 13038-13041, 1994.
Publisher : The Journal of Physical Chemistry
Year : 2015
Cite this Research Publication : W. PARK, Jang, Y. J., Kim, G. Y., Lu, B., Siu, G., Silva, H., and Dr. Sasangan Ramanathan, “Method for Forming TiSiN Thin Film Layer by using Atomic Layer Deposition (Granted)”, U.S. Patent 9159608, US 14/391,2942015.
Publisher : Number 9159608
Year : 2015
Cite this Research Publication : W. PARK, Jang, Y. J., Kim, G. Y., Lu, B., Siu, G., Silva, H., and Dr. Sasangan Ramanathan, “Method for forming TiSiN thin film layer by using atomic layer deposition”, U.S. Patent US 14/391,2942015.
Year : 2011
Cite this Research Publication : Kim G. Y., Srivastava A., Seidel T. E., Londergan A. R., and Dr. Sasangan Ramanathan, “Transient Enhanced Atomic layer Deposition (Granted)”, U.S. Patent 79814732011.
Year : 2011
Cite this Research Publication : Kim G. Y., Srivastava A., Seidel T. E., Londergan A. R., and Dr. Sasangan Ramanathan, “Transient Enhanced Atomic layer Deposition”, U.S. Patent 79814732011.
Year : 2006
Cite this Research Publication : J. Puchacz, Dr. Sasangan Ramanathan, Reyes, M., and Seidel, T., “Multi-single Wafer Processing Apparatus”, U.S. Patent US 11/224,7672006.
Year : 2005
Cite this Research Publication : Gopinath, S., Van Cleemput, P. A., Schulberg, M., Ramanathan, S., Juarez, F., and Joyce, P., Method and Apparatus for Introduction of Solid Precursors and Reactants into Supercritical Fluid Reactor, US Patent, 6951765, 2005
Year : 2005
Cite this Research Publication : J. Puchacz, Dr. Sasangan Ramanathan, Reyes, M., and Seidel, T., “Multi-single Wafer Processing Apparatus (Filed)”, U.S. Patent File Number 20060137609, US 11/224,7672005.
Year : 2005
Cite this Research Publication : S. H. Lee and Dr. Sasangan Ramanathan, “Method for the Formation of Diffusion Barrier (Granted)”, U.S. Patent 6887781, US 10/425,3062005.
Publisher : Number 6887781, US 10/425,306, USA
Year : 2005
Cite this Research Publication : S. Gopinath, Van Cleemput, P. A., Schulberg, M., Dr. Sasangan Ramanathan, Juarez, F., and Joyce, P., “Method and Apparatus for Introduction of Solid Precursors and Reactants into a Supercritical Fluid Reactor (Granted)”, U.S. Patent US Patent, 6951765, US 10/016,0172005.
Publisher : Number US Patent
Year : 2005
Cite this Research Publication : X. Liu, Seidel, T., Lee, E., Doering, K., and Dr. Sasangan Ramanathan, “Methods and Apparatus for Cycle Time Improvements for Atomic Layer Deposition”, 2005.
Year : 2005
Cite this Research Publication : S. H. Lee and Dr. Sasangan Ramanathan, “Method for the Formation of Diffusion Barrier”, U.S. Patent US 10/425,3062005.
Year : 2005
Cite this Research Publication : S. Gopinath, Van Cleemput, P. A., Schulberg, M., Dr. Sasangan Ramanathan, Juarez, F., and Joyce, P., “Method and Apparatus for Introduction of Solid Precursors and Reactants into a Supercritical Fluid Reactor”, U.S. Patent US 10/016,0172005.
Year : 2004
Cite this Research Publication : X. Liu, Seidel, T., Lee, E., Doering, K., and Dr. Sasangan Ramanathan, “Methods and Apparatus for Cycle Time Improvements for Atomic Layer Deposition (Filed)”, U.S. Patent File Number 20050016956, 2004.
Year : 2004
Cite this Research Publication : A. R. Londergan, Dr. Sasangan Ramanathan, Winkler, J., and Seidel, T. E., “Passivation Method for Improved Uniformity and Repeatability for Atomic Layer Deposition and Chemical Vapor Deposition (Granted)”, U.S. Patent 6720259, US 10/262,9922004.
Year : 2004
Cite this Research Publication : A. R. Londergan, Dr. Sasangan Ramanathan, Winkler, J., and Seidel, T. E., “Passivation Method for Improved Uniformity and Repeatability for Atomic Layer Deposition and Chemical Vapor Deposition”, U.S. Patent US 10/262,9922004.
Year : 2003
Cite this Research Publication : Dalton, J., Powell, R. A., Kailasam, S. K., and Ramanathan, S., Formation of Metal Derived Layers by Simultaneous Deposition and Evaporation of Metals, US Patent, 6589887, 2003
Year : 2003
Cite this Research Publication : J. Dalton, Powell, R. A., Kailasam, S. K., and Dr. Sasangan Ramanathan, “Formation of Metal-derived Layers by Simultaneous Deposition and Evaporation of Metal (Granted)”, U.S. Patent 65898872003.
Year : 2003
Cite this Research Publication : J. Dalton, Powell, R. A., Kailasam, S. K., and Dr. Sasangan Ramanathan, “Forming Metal-derived Layers by Simultaneous Deposition and Evaporation of Metal”, U.S. Patent US 09/975,6122003.
Year : 2000
Cite this Research Publication : S. Sengupta, Stowell, S., Sengupta, L., Joshi, P. C., Dr. Sasangan Ramanathan, and Desu, S. B., “Ferroelectric Thin Film Composites made by Metalorganic Decomposition (Granted)”, U.S. Patent US Patent, 60715552000.
Year : 2000
Cite this Research Publication : Dr. Sasangan Ramanathan, Khan A., and Foggiato G. A., “Surface Modification of Semiconductors using Electromagnetic Radiation (Granted)”, U.S. Patent 60157592000.
Year : 2000
Cite this Research Publication : Dr. Sasangan Ramanathan, A., K., and A., F. G., “Surface Modification of Semiconductors using Electromagnetic Radiation”, U.S. Patent 60157592000.
Year : 2000
Cite this Research Publication : S. Sengupta, Stowell, S., Sengupta, L., Joshi, P. C., Dr. Sasangan Ramanathan, and Desu, S. B., “Ferroelectric Thin Film Composites made by Metalorganic Decomposition (Granted)”, U.S. Patent US Patent, 60715552000.
Year : 1999
Cite this Research Publication : Dr. Sasangan Ramanathan, Desu S. B., and Suchicital C.A., “Flash Evaporator (Granted)”, 1999.
Publisher : USA
Year : 1999
Cite this Research Publication : Dr. Sasangan Ramanathan, B., D. S., and C.A., S., “Flash Evaporator”, 1999.
Year : 2013
Cite this Research Publication : Dr. Sasangan Ramanathan, “Atomic Layer Deposition of Materials for Alternate Non-Volatile Memory Technologies”, Invited Talk at the 13th Atomic Layer Deposition Conference, American Vacuum Society. 2013.
Publisher : Invited Talk at the 13th Atomic Layer Deposition Conference, American Vacuum Society
Year : 2012
Cite this Research Publication : L. Yang, Weber, U., Maumann, P. K., Karim, Z., Dr. Sasangan Ramanathan, Lu, B., Czubatyj, W., Hudgens, S., and Lowrey, T., “Deposition and Electrical Characterization of ALD GexSbyTez for Future Applications”, 12th International Conference on Atomic Layer Deposition, American Vacuum Society. 2012.
Publisher : American Vacuum Society
Year : 2012
Cite this Research Publication : Z. Karim, Yang, L., Mack, J., Liu, M., Weber, U., Baumann, P., Dr. Sasangan Ramanathan, Lu, B., Czubatyj, W., Hudgens, S., and , “Advances in ALD GST Process and Equipment for sub-20nm PCRAM Devices: Precursor delivery, GST Gapfill and Electrical Characterization”, Conference Proceedings by the Society for Solid State and Electrochemical Science and Technology. The Electrochemical Society, 2012.
Publisher : The Electrochemical Society
Year : 2011
Cite this Research Publication : B. Lu, Karim, Z., and Dr. Sasangan Ramanathan, “Material and Tool Design Challenges for Taking ALD to High Volume Production Beyond 30nm Node”, Symposium on Manufacturing and Technology Section MS2, American Vacuum Society. 2011.
Publisher : American Vacuum Society
Year : 2011
Cite this Research Publication : L. Yang, Weber, U., Baumann, P. K., Mack, J., Karim, Z., Dr. Sasangan Ramanathan, and Lu, B., “Atomic Layer Deposition of Smooth Phase Change GexSbyTez Layers on Planar and 3D Structures”, International Conference on Atomic Layer Deposition, American Vacuum Society. 2011.
Publisher : American Vacuum Society
Year : 2010
Cite this Research Publication : P. Lehnen, Weber, U., Baumann, P. K., Senzaki, Y., Karim, Z., Dr. Sasangan Ramanathan, Lu, B., Reed, J., Czubatyj, W., Hudgens, S., and Dennison, C., “Void Free Gapfill and Phase Change Memory Device Characterization of GeSbTe Films Deposited Using Atomic Vapor Deposition”, 10th Atomic Layer Deposition Conference, American Vacuum Society. 2010.
Publisher : 10th Atomic Layer Deposition Conference, American Vacuum Society
Year : 2009
Cite this Research Publication : Z. Karim, Senzaki, Y., . Y Kim, G., Barelli, C., Okuyama, Y., Kim, H. Y., Lu, B., Lindner, J., and Dr. Sasangan Ramanathan, “Needs for Next Generation Memory and Enabling Solutions based on Advanced Vaporizer Technology”, 9th Atomic Layer Deposition Conference, American Vacuum Society. 2009.
Publisher : 9th Atomic Layer Deposition Conference, American Vacuum Society
Year : 2009
Cite this Research Publication : C. Barelli, . Y Kim, H., . Y Kim, G., Senzaki, Y., Okuyama, Y., Mack, J., Lindner, J., Lu, B., Karim, Z., and Dr. Sasangan Ramanathan, “Highly Conformal ALD of LaOx and La-based High-k Dielectric Films Using Novel Vaporizer Technology”, Materials Research Society Spring Meeting. 2009.
Publisher : Materials Research Society Spring Meeting
Year : 2009
Cite this Research Publication : Dr. Sasangan Ramanathan, “Development of Next Generation High-k Filmss – Challenges and Solutions”, European Materials Research Society Spring Meeting. France, 2009.
Publisher : European Materials Research Society Spring Meeting
Year : 2008
Cite this Research Publication : C. Choi, Ando, T., Karim, Z., and Dr. Sasangan Ramanathan, “Modulating Work Function for pFET with AVD Ru-based and TaN-based Gate Electrodes”, 39th IEEE Semiconductor Interface Specialist Conference. 2008.
Publisher : 39th IEEE Semiconductor Interface Specialist Conference
Year : 2008
Cite this Research Publication : Y. Senzaki, Seidel, T., McCormick, J., Kim, G. Y., Kim, H. Y., Karim, Z., Lu, B., Dr. Sasangan Ramanathan, Lindner, J., Silva, H., and Daulesberg, M., “Atomic Level Solutions for Advanced Microelectronic Applications”, in International Conference on Solid State and Integrated Circuit Technology, ICSICT 2008. , 2008.
Publisher : International Conference on Solid State and Integrated Circuit Technology, ICSICT 2008.
Year : 2008
Cite this Research Publication : Z. Karim, Senzaki, Y., Dr. Sasangan Ramanathan, Lindner, J., Silva, H., and Dauelsberg, M., “Advances in ALD Equipment for sub-40nm Memory Capacitor Dielectrics: Precursor delivery, Materials and Processes”, ECS Transactions, vol. 16, pp. 125–134, 2008.
Publisher : ECS Transactions, The Electrochemical Society
Year : 2006
Cite this Research Publication : M. Schumacher, Dr. Sasangan Ramanathan, Baumann, P. K., J. Linder, Lohe, C., Weber, U., Karim, Z., Londergan, A. R., and Seidel, T. E., “Atomic Vapor Deposition for Next Generation of Advanced Semiconductor Devices”, The Electrochemical Society, Meeting Abstracts, vol. 12. p. 487, 2006.
Publisher : The Electrochemical Society, Meeting Abstracts
Year : 2005
Cite this Research Publication : H. J. Lim, Kim, Y. S., Jung, H. S., Han, S. K., Kim, M. J., Lee, J. H., Lee, N. I., Chung, Y., Kim, H. Y., Lee, N. K., Dr. Sasangan Ramanathan, Seidel, T. E., and Boleslawski, M., “Evaluation od ALD Hafnium Silicate and Improvement of Reliability Characteristics”, Atomic Layer Deposition Conference. 2005.
Publisher : Atomic Layer Deposition Conference
Year : 2004
Cite this Research Publication : Kim G. Y., Srivastava A., Foote D., Londergan A., Karim Z., Seidel T. E., and Dr. Sasangan Ramanathan, “A High Deposition Rate Process Using Limited Optimized Reaction ALD”, Atomic Layer Deposition Conference”, Atomic Layer Deposition Conference, American Vacuum Society. pp. 1308-1311, 2004.
Publisher : Atomic Layer Deposition Conference, American Vacuum Society
Year : 2004
Cite this Research Publication : X. Liu, Dr. Sasangan Ramanathan, Lee, E., and Seidel, T. E., “Atomic Layer Deposition of Aluminum Nitride Thin Films from Trimethyl Aluminum (TMA) and Ammonia”, MRS Proceedings. Cambridge Univ Press, pp. 11-18, 2004.
Publisher : Cambridge Univ Press
Year : 2003
Cite this Research Publication : A. R. Londergan, Dr. Sasangan Ramanathan, Winkler, J., Seidel, T. E., Gutt, J., Brown, G., and Murto, R. W., “PATHWAYS FOR ADVANCED TRANSISTORS USING HAFNIUM–BASED OXIDES BY ATOMIC LAYER DEPOSITION”, Electrochemical Society. pp. 243-264, 2003.
Publisher : Electrochemical Society
Year : 2003
Cite this Research Publication : X. Liu, Dr. Sasangan Ramanathan, and Seidel, T. E., “Atomic layer deposition of hafnium oxide thin films from tetrakis (dimethylamino) hafnium (TDMAH) and ozone”, MRS Proceedings. Cambridge Univ Press, pp. 97-102, 2003.
Publisher : Cambridge Univ Press
Year : 2002
Cite this Research Publication : Dr. Sasangan Ramanathan, Seidel, T., Londergan, A., Lee, E., and Jansz, A., “Pathways in Competitiveness for Atomic Layer Deposition”, Proceedings of the AVS 3rd International Conference on Microelectronics and Interfaces. pp. 11-14, 2002.
Publisher : Proceedings of the AVS 3rd International Conference on Microelectronics and Interfaces
Year : 2002
Cite this Research Publication : J. H Lee, Kim J., Kim Y. S., S., J. H., Lee, N. I., Kang, H. K., Suh, K. P., Jeong, M. M., Hyun, K., Baik, H. S., Chung, Y. S., Liu, X., Dr. Sasangan Ramanathan, Seidel, T. E., Winkler, J., Londergan, A., Kim, H. Y., M., J., and Lee, N. K., “Mass Production Worthy HfO2-Al2O3 Laminates Capacitor Technology using Hf Liquid Precursor for sub-100 nm DRAMS”, Techincal Digest, International Electron Devices Meeting. pp. 221-224, 2002.
Publisher : Techincal Digest, International Electron Devices Meeting
Year : 1998
Cite this Research Publication : S.T.Oyama, Dr. Sasangan Ramanathan, Schwartz, V., and Dhandapani, B., “Synthesis and Reactivity of Niobium Molybdenum Oxycarbide – A New High Activity Hydroprocessing Catalys”, Abstracts of Papers of the American Chemical Society, vol. 215. p. U228, 1998.
Publisher : Abstracts of Papers of the American Chemical Society
Year : 1996
Cite this Research Publication : J. Wang, Dr. Sasangan Ramanathan, M. Castonguay, McBreen, P. H., and Oyama, S. T., “Monograph of the Chemistry of Transition Metal Nitrides and Carbides”, Chapman and Hall, London, 1996, p. 426.
Publisher : Chapman and Hall
Year : 1996
Cite this Research Publication : J. Wang, Dr. Sasangan Ramanathan, Castonguay, M., and McBreen, P. H., “Chemisorption of CO and NO on Molybdenum Carbide Foils”, in Book Chapter in The Chemistry of Transition Metal Carbides and Nitrides, Springer, Dordrecht, 1996, pp. 426-438.
Publisher : Springer
| Project Year (Duration) | Funding Organization | Amount |
|---|---|---|
| 2016-2021 | Visvesvaraya Funds | ₹ 28,800,000 |
| 2016-2019 | UNICEF | ₹ 7,400,000 |
| 2018 | DST-FIST | ₹ 26,500,000 |
| 2018-2020 | LAM Research (USA) | ₹ 2,340,000 |
| 2018-2020 | Department of Social Defense | ₹ 3,600,000 |
| 2019-2021 | LAM Research (USA) | ₹ 4,680,000 |
| 2019-2022 | Hindustan Petroleum Corporation Limited | ₹ 5,800,000 |
| 2019-2023 | DRDO-CAIR | ₹ 7,200,000 |
| 2019-2021 | Department of Social Defense | ₹ 3,600,000 |
| TOTAL | ₹ 89,920,000 |
