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Dr. Sundararaman Gopalan

Professor, Electronics and Communication Engineering, School of Engineering, Amritapuri

Qualification: B-Tech, MS, Ph.D
sundar@am.amrita.edu
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Research Interest: Earthquake Induced Landslides, Electronic Materials, IOT devices, Solar Energy

Bio

Br. Sundareshamrita Chaitanya (Dr. Sundararaman Gopalan) received his B.Tech. degree from IIT-Varanasi, in 1995. He completed his Master’s and Ph.D. degrees from The University of Texas at Austin, USA, in 2002. After working for two years at International Sematech, a semiconductor research consortium in the US, he joined Amrita in October of 2004 as an Assistant Professor in the Department of ECE. He was the Head of the Department of ECE from 2010 to 2019. He has co-authored more than 85 International publications to date and guided several bachelors, masters, and PhD students in research projects. His current research interests include the Study of Earthquake Induced Landslides, Electronic Materials, and Solar Energy Microgrids for rural development. He is currently serving as Professor in the ECE Department.

Publications

Journal Article

Year : 2023

Earthquake-triggered landslides and Environmental Seismic Intensity: insights from the 2018 Papua New Guinea earthquake (Mw 7.5)

Cite this Research Publication : Sridharan, Aadityan; Ferrario, Maria Francesca; Gopalan, Sundararaman; , "Earthquake-triggered landslides and Environmental Seismic Intensity: insights from the 2018 Papua New Guinea earthquake (Mw 7.5)", All Earth, vol 35. issue 1, 195-209, 2023

Publisher : Taylor & Francis

Year : 2023

Environmental effects caused by the Mw 8.2, September 8, 2017, and Mw 7.4, June 23, 2020, Chiapas-Oaxaca (Mexico) subduction events: comparison of large intraslab and interface earthquakes

Cite this Research Publication : M. Magdalena Velázquez-Bucio, Maria Francesca Ferrario, Eliana Muccignato, Sabina Porfido, Aadityan Sridharan, Kervin Chunga, Franz Livio, Sundararaman Gopalan, Alessandro Maria Michetti, "Environmental effects caused by the Mw 8.2, September 8, 2017, and Mw 7.4, June 23, 2020, Chiapas-Oaxaca (Mexico) subduction events: Comparison of large intraslab and interface earthquakes", Quaternary International, Volume 651, 2023, Pages 62-76

Publisher : Elsevier

Year : 2022

Comparative Analysis of Eight Direction Sobel Edge Detection Algorithm for Brain Tumor MRI Images

Cite this Research Publication : Remya Ajai AS, Sundararaman Gopalan, "Comparative Analysis of Eight Direction Sobel Edge Detection Algorithm for Brain Tumor MRI Images", Procedia Computer Science Volume 201 Pages 487-494, 2022

Publisher : Elsevier

Year : 2022

Piezoelectric studies of PEDOT: PSS incorporated BaTiO3/PDMS micro-generator

Cite this Research Publication : 2. BaTiO3/PDMS micro-generator." Materials Today: Proceedings 33 (2020): 1379-1383.

Publisher : Materials Today: Proceedings

Year : 2021

Seismic Data Analytics for Estimating Seismic Landslide Hazard Using Artificial Accelerograms

Cite this Research Publication : Sundararaman Gopalan " Seismic Data Analytics for Estimating Seismic Landslide Hazard Using Artificial Accelerograms", Advances in Intelligent Systems and Computing book series (AISC,volume 1311)

Publisher : Advances in Intelligent Systems and Computing book series (AISC,volume 1311)

Year : 2021

Effect of Silicon Nitride on Physical Properties of SBR

Cite this Research Publication : R. Harikrishnan, T. P. Anirudh Mohan, Rahulan N., and Sudararaman Gopalan, “Effect of Silicon Nitride on Physical Properties of SBR”, Materials Today: Proceedings, vol. 43, pp. 3833-3836, 2021.

Publisher : Materials Today: Proceedings

Year : 2020

Predictive analysis of co-seismic rock fall hazard in hualien county Taiwan

Cite this Research Publication : Sundararaman Gopalan " Predictive analysis of co-seismic rock fall hazard in hualien county Taiwan" ,Advances in Intelligent Systems and Computing

Publisher : Advances in Intelligent Systems and Computing

Year : 2020

Piezoelectric studies of PEDOT:PSS incorporated BaTiO3/ PDMS micro-generator

Cite this Research Publication : Baby Sreeja S. D., Dr. Sundararaman Gopalan, and Dr. Sreekala C. O., “Piezoelectric studies of PEDOT:PSS incorporated BaTiO3/ PDMS micro-generator”, Materials Today: Proceedings, 2020.

Publisher : Materials Today

Year : 2019

Sustainable trade-off between reliability and electricity prices for geographically isolated communities

Cite this Research Publication : Fabien Chidanand Robert, Gyanendra Singh Sisodia, Sundararaman Gopalan,
Sustainable trade-off between reliability and electricity prices for geographically isolated communities, Energy Reports, Volume 5, 2019, Pages 1399-1407

Publisher : Elsevier

Year : 2018

Effects of substrate heating and post-deposition annealing on characteristics of thin MOCVD HfO 2 films

Cite this Research Publication : Dr. Sundararaman Gopalan, Ramesh, S., Dutta, S., and Garbhapu, V. Virajit, “Effects of substrate heating and post-deposition annealing on characteristics of thin MOCVD HfO 2 films”, IOP Conference Series: Materials Science and Engineering, vol. 310, p. 012125, 2018

Publisher : IOP Conference Series: Materials Science and Engineering

Year : 2018

A critical review on the utilization of storage and demand response on the implementation of renewable energy microgrids

Cite this Research Publication :
D. Fabien Chi Robert, Sisodia, G. Singh, and Dr. Sundararaman Gopalan, “A critical review on the utilization of storage and demand response on the implementation of renewable energy microgrids”, Sustainable Cities and Society, Special issue on Microgrid Implementation and Optimization, Elsevier, vol. 40, pp. 735 - 745, 2018.

Publisher : Sustainable Cities and Society, Special issue on Microgrid Implementation and Optimization,

Year : 2018

Affordable Rural Electricity Through Intelligent Grid Extension And Local Renewable Energy Generation

Cite this Research Publication :
F. C. Robert, Sisodia, G. S., and Dr. Sundararaman Gopalan, “Affordable Rural Electricity Through Intelligent Grid Extension And Local Renewable Energy Generation”, Sustainable Cities and Society, Special issue on Microgrid Implementation and Optimization; Elsevier, 2018.

Publisher : Sustainable Cities and Society, Special issue on Microgrid Implementation and Optimization

Year : 2018

A critical review on the utilization of storage and demand response for the implementation of renewable energy microgrids

Cite this Research Publication : Fabien Chidanand Robert, Sisodia, G. Singh, and Dr. Sundararaman Gopalan, “A critical review on the utilization of storage and demand response for the implementation of renewable energy microgrids”, Sustainable Cities and Society, vol. 40, pp. 735 - 745, 2018.

Publisher : Sustainable Cities and Society, .

Year : 2018

Low cost, highly reliable rural electrification through a combination of grid extension and local renewable energy generation

Cite this Research Publication : Fabien Chidanand Robert and Dr. Sundararaman Gopalan, “Low cost, highly reliable rural electrification through a combination of grid extension and local renewable energy generation”, Sustainable Cities and Society, vol. 42, pp. 344 - 354, 2018.

Publisher : Sustainable Cities and Society .

Year : 2015

Identification of current transport mechanism in Al 2 O 3 thin films for memory applications

Cite this Research Publication : Ramesh, S., Dutta, S., Shankar, B. et al. Identification of current transport mechanism in Al2O3 thin films for memory applications. Appl Nanosci 5, 115–123 (2015)

Publisher : Springer Berlin Heidelberg

Year : 2014

Identification of current transport mechanism in Al2O3 thin films for memory applications

Cite this Research Publication : S. Ramesh, Dutta, S., Balakrishnan Shankar, and Dr. Sundararaman Gopalan, “Identification of current transport mechanism in Al2O3 thin films for memory applications”, Applied Nanoscience, vol. 5, pp. 115-123, 2014.

Publisher : Applied Nanoscience

Year : 2012

Effect of PVD process parameters on the quality and reliability of thin (10–30 nm) Al 2 O 3 dielectrics

Cite this Research Publication : Dutta, S., Ramesh, S., Shankar, B. et al. Effect of PVD process parameters on the quality and reliability of thin (10–30 nm) Al2O3 dielectrics. Appl Nanosci 2, 1–6 (2012)

Publisher : Springer Berlin Heidelberg

Year : 2012

Effect of PVD process parameters on the quality and reliability of thin (10–30 nm) Al2O3 dielectrics

Cite this Research Publication : S. Dutta, Ramesh, S., Shankar, B., and Dr. Sundararaman Gopalan, “Effect of PVD process parameters on the quality and reliability of thin (10–30 nm) Al2O3 dielectrics”, Applied Nanoscience, vol. 2, pp. 1–6, 2012.

Publisher : Springer

Year : 2011

Low-Cost Remote Patient Monitoring System Based on Reduced Platform Computer Technology

Cite this Research Publication : N. Alex Jacob, Pillai, V., Nair, S., Harrell, D. Toshio, Delhommer, R., Chen, B., Sanchez, I., Almstrum, V., and Dr. Sundararaman Gopalan, “Low-Cost Remote Patient Monitoring System Based on Reduced Platform Computer Technology”, Telemedicine and e-Health, vol. 17, pp. 536–545, 2011.

Publisher : Mary Ann Liebert, Inc.

Year : 2011

Low-cost remote patient monitoring system based on reduced platform computer technology.

Cite this Research Publication : N. A. Jacob, Pillai, V., Nair, S., ,, Harrell, D. T., Delhommer, R., Chen, B., Sanchez, I., Almstrum, V., and Dr. Sundararaman Gopalan, “Low-cost remote patient monitoring system based on reduced platform computer technology.”, Telemedicine journal and e-health : the official journal of the American Telemedicine Association, vol. 17, pp. 536-545, 2011

Publisher : Telemedicine and e-Health, Mary Ann Liebert, Inc. 140 Huguenot Street, 3rd Floor New Rochelle, NY 10801 USA,

Year : 2004

Subnanometer scaling of HfO2/metal electrode gate stacks

Cite this Research Publication : J. J. Peterson, Young, C. D., Barnett, J., Dr. Sundararaman Gopalan, Gutt, J., Lee, C. - H., Li, H. - J., Hou, T. - H., Kim, Y., Lim, C., and , “Subnanometer scaling of HfO2/metal electrode gate stacks”, Electrochemical and solid-state letters, vol. 7, pp. G164–G167, 2004.

Publisher : Electrochemical and solid-state letters, The Electrochemical Society,

Year : 2003

Improvement of surface carrier mobility of HfO 2 MOSFETs by high-temperature forming gas annealing

Cite this Research Publication :
K. Onishi, Kang, C. Seok, Choi, R., Cho, H. - J., Dr. Sundararaman Gopalan, Nieh, R. E., Krishnan, S. A., and Lee, J. C., “Improvement of surface carrier mobility of HfO 2 MOSFETs by high-temperature forming gas annealing”, Electron Devices, IEEE Transactions on, vol. 50, pp. 384–390, 2003.

Publisher : Electron Devices, IEEE Transactions on, IEEE,

Year : 2003

High-performance TaN/HfSiON/Si metal-oxide-semiconductor structures prepared by NH3 post-deposition anneal

Cite this Research Publication :
M. Shahariar Akbar, Dr. Sundararaman Gopalan, Cho, H. - J., Onishi, K., Choi, R., Nieh, R., Kang, C. S., Kim, Y. H., Han, J., Krishnan, S., and , “High-performance TaN/HfSiON/Si metal-oxide-semiconductor structures prepared by NH3 post-deposition anneal”, Applied physics letters, vol. 82, pp. 1757–1759, 2003.

Publisher : Applied physics letters, American Institute of Physics,

Year : 2002

Bonding states and electrical properties of ultrathin HfO$_x$N$_y$ gate dielectrics

Cite this Research Publication : C. S. Kang, Cho, H. - J., Onishi, K., Nieh, R., Choi, R., Dr. Sundararaman Gopalan, Krishnan, S., Han, J. H., and Lee, J. C., “Bonding states and electrical properties of ultrathin HfO$_x$N$_y$ gate dielectrics”, Applied Physics Letters, vol. 81, p. 2593, 2002.

Publisher : Applied Physics Letters

Year : 2002

Evaluation of silicon surface nitridation effects on ultra-thin ZrO2 gate dielectrics

Cite this Research Publication :
R. Nieh, Choi, R., Dr. Sundararaman Gopalan, Onishi, K., Kang, C. Seok, Cho, H. - J., Krishnan, S., and Lee, J. C., “Evaluation of silicon surface nitridation effects on ultra-thin ZrO2 gate dielectrics”, Applied physics letters, vol. 81, pp. 1663–1665, 2002.

Publisher : Applied physics letters, AIP Publishing,

Year : 2002

Structural and electrical properties of HfO 2 with top nitrogen incorporated layer

Cite this Research Publication : H. - J. Cho, Kang, C. Seok, Onishi, K., Dr. Sundararaman Gopalan, Nieh, R., Choi, R., Krishnan, S., and Lee, J. C., “Structural and electrical properties of HfO 2 with top nitrogen incorporated layer”, Electron Device Letters, IEEE, vol. 23, pp. 249–251, 2002.

Publisher : Electron Device Letters, IEEE, IEEE

Year : 2002

Process development, material analysis, and electrical characterization of ultra thin hafnium silicate films for alternative gate dielectric application

Cite this Research Publication : Dr. Sundararaman Gopalan, “Process development, material analysis, and electrical characterization of ultra thin hafnium silicate films for alternative gate dielectric application”, ProQuest Dissertations And Theses; Thesis (Ph.D.)--The University of Texas at Austin, vol. 64, no. 01, p. 0367;176 , 2002.

Publisher : ProQuest Dissertations And Theses; Thesis (Ph.D.)--The University of Texas at Austin,

Year : 2002

Electrical and physical characteristics of ultrathin hafnium silicate films with polycrystalline silicon and TaN gates

Cite this Research Publication :
Dr. Sundararaman Gopalan, Onishi, K., Nieh, R., Kang, C. S., Choi, R., Cho, H. - J., Krishnan, S., and Lee, J. C., “Electrical and physical characteristics of ultrathin hafnium silicate films with polycrystalline silicon and TaN gates”, Applied physics letters, vol. 80, pp. 4416–4418, 2002.

Publisher : AIP Publishing

Year : 2002

Area dependence of TDDB characteristics for HfO2 gate dielectrics

Cite this Research Publication :
Y. Hee Kim, Onishi, K., Kang, C. Seok, Cho, H. - J., Nieh, R., Dr. Sundararaman Gopalan, Choi, R., Han, J., Krishnan, S., and Lee, J. C., “Area dependence of TDDB characteristics for HfO2 gate dielectrics”, IEEE Electron Device Letters, vol. 23, pp. 594-596, 2002.

Publisher : IEEE Electron Device Letters

Year : 2000

Ultrathin Gate Oxynitrides Grown Using Fast Ramp Vertical Furnace for Sub-130 Nanometer Technology

Cite this Research Publication : A. Lucas, Dr. Sundararaman Gopalan, Lee, J. C., Kaushal, S., Niino, R., and Tada, Y., “Ultrathin Gate Oxynitrides Grown Using Fast Ramp Vertical Furnace for Sub-130 Nanometer Technology”, Electrochemical and Solid-State Letters, vol. 3, pp. 389–391, 2000.

Publisher : Electrochemical and Solid-State Letters

Year : 2000

Study of the electronic conduction mechanism in Nb-doped SrTiO3 thin films with Ir and Pt electrodes

Cite this Research Publication : S. Gopalan, Balu, V., Lee, J. - H., Hee-Han, J., and Lee, J. C., “Study of the electronic conduction mechanism in Nb-doped SrTiO3 thin films with Ir and Pt electrodes”, Applied Physics Letters, vol. 77, pp. 1526–1528, 2000.

Publisher : AIP Publishing

Year : 2000

Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric

Cite this Research Publication :
L. Kang, Lee, B. Hun, Qi, W. - J., Jeon, Y., Nieh, R., Dr. Sundararaman Gopalan, Onishi, K., and Lee, J. C., “Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric”, Electron Device Letters, IEEE, vol. 21, pp. 181–183, 2000

Publisher : Electron Device Letters, IEEE

Year : 1999

The niobium doping effects on resistance degradation of strontium titanate thin film capacitors

Cite this Research Publication : J. - H. Lee, Mohammedali, R., Han, J. H., Balu, V., Dr. Sundararaman Gopalan, Wong, C. - H., and Lee, J. C., “The niobium doping effects on resistance degradation of strontium titanate thin film capacitors”, Applied physics letters, vol. 75, pp. 1455–1457, 1999.

Publisher : Applied physics letters, AIP Publishing,

Year : 1999

Effect of niobium doping on the microstructure and electrical properties of strontium titanate thin films for semiconductor memory application

Cite this Research Publication : Dr. Sundararaman Gopalan, Wong, C. - H., Balu, V., Lee, J. - H., Han, J. H., Mohammedali, R., and Lee, J. C., “Effect of niobium doping on the microstructure and electrical properties of strontium titanate thin films for semiconductor memory application”, Applied physics letters, vol. 75, pp. 2123–2125, 1999.

Publisher : Applied physics letters, AIP

Conference Paper

Year : 2021

Effect of titanium carbide powder as a filler on the mechanical properties of silicone rubber

Cite this Research Publication : S. Guruswamy Yadav, Nagasai Pratap Reddy Guntur, Rahulan N., Sundararaman Gopalan,
Effect of titanium carbide powder as a filler on the mechanical properties of silicone rubber,Materials Today: Proceedings, Volume 46, Part 1, 2021, Pages 665-671

Publisher : Elsevier

Year : 2020

Effect of titanium carbide as a filler on the mechanical properties of styrene butadiene rubber

Cite this Research Publication : Nagasai Pratap Reddy Guntur, S Guruswamy Yadav, Sundararaman Gopalan,
Effect of Titanium Carbide as a Filler on the Mechanical Properties of Styrene Butadiene Rubber, Materials Today: Proceedings, Volume 24, Part 2, 2020, Pages 1552-1560

Publisher : Elsevier

Year : 2020

A Novel Methodology for the Classification of Debris Scars using Discrete Wavelet Transform and Support Vector Machine

Cite this Research Publication : A. Sridharan, Remya Ajai A. S., and Sudararaman Gopalan, “A Novel Methodology for the Classification of Debris Scars using Discrete Wavelet Transform and Support Vector Machine”, in Procedia Computer Science, 2020, vol. 171, pp. 609 - 616.

Publisher : Procedia Computer Science

Year : 2020

Analysis of Active Contours Without Edge-Based Segmentation Technique for Brain Tumor Classification Using SVM and KNN Classifiers

Cite this Research Publication : Remya Ajai A. S. and Gopalan, S., “Analysis of Active Contours Without Edge-Based Segmentation Technique for Brain Tumor Classification Using SVM and KNN Classifiers”, in Advances in Communication Systems and Networks, Singapore, 2020.

Publisher : Advances in Communication Systems and Networks,

Year : 2018

Comparison of High K Metal Gate Based CMOS Amplifiers performance with traditional Gate stack structures

Cite this Research Publication :
S. M, Anand, D., A, D. P., and Dr. Sundararaman Gopalan, “Comparison of High K Metal Gate Based CMOS Amplifiers performance with traditional Gate stack structures”, in ICEES 2018, 4th International Conference on Electrical Energy System , India, 2018.

Publisher : ICEES 2018, 4th International Conference on Electrical Energy System

Year : 2018

Accessing the performance of CMOS Amplifiers using High-k-Dielectric with Metal Gate on high mobility substrate

Cite this Research Publication : D. Anand, M, S., Dr. Sundararaman Gopalan, and A, P., “Accessing the performance of CMOS Amplifiers using High-k-Dielectric with Metal Gate on high mobility substrate”, in ICACDS 2018, Springer CCIS, 2018.

Publisher : ICACDS 2018, Springer CCIS

Year : 2017

IoT Based Low Cost Single Sensor Node Remote Health Monitoring System

Cite this Research Publication :
V. Virajit Garbhapu and Dr. Sundararaman Gopalan, “IoT Based Low Cost Single Sensor Node Remote Health Monitoring System”, in 8th International Conference on Emerging Ubiquitous Systems and Pervasive Networks, EUSPN 2017 and the 7th International Conference on Current and Future Trends of Information and Communication Technologies in Healthcare, ICTH 2017, Lund; Sweden, 2017, vol. 113, pp. 408 - 415.

Publisher : 8th International Conference on Emerging Ubiquitous Systems and Pervasive Networks, EUSPN 2017 and the 7th International Conference on Current and Future Trends of Information and Communication Technologies in Healthcare,

Year : 2017

The critical role of anchor customers in rural microgrids, Impact of load factor on energy cost

Cite this Research Publication : Fabien Chidanand Robert, Sisodia, G. S., and Dr. Sundararaman Gopalan, “The critical role of anchor customers in rural microgrids, Impact of load factor on energy cost”, in 2017 International Conference on Computation of Power, Energy Information and Commuincation (ICCPEIC), Chennai, India, 2017

Publisher : 2017 International Conference on Computation of Power, Energy Information and Commuincation

Year : 2017

The critical role of anchor customers in rural microgrids: Impact of load factor on energy cost

Cite this Research Publication : D. Fabien Chi Robert, Sisodia, G. S., and Gopalan, S., “The critical role of anchor customers in rural microgrids: Impact of load factor on energy cost”, in 2017 International Conference on Computation of Power, Energy Information and Commuincation (ICCPEIC), 2017.

Publisher : 2017 International Conference on Computation of Power, Energy Information and Commuincation (ICCPEIC)

Year : 2005

ALD of advanced high-k and metal gate stacks for MOS devices

Cite this Research Publication : J. Gutt, Dr. Sundararaman Gopalan, Brown, G. A., Kirsch, P. D., Peterson, J. J., Gardner, M. I., Li, H. - J., Lysaght, P., Alshareef, H. N., Choi, K., and , “ALD of advanced high-k and metal gate stacks for MOS devices”, in Proceedings-Electrochemical Society, 2005, vol. PV 2005-05, pp. 282-292.

Publisher : Proceedings-Electrochemical Society, Electrochemical Society

Year : 2004

Intrinsic characteristics of high-k devices and implications of fast transient charging effects (FTCE)

Cite this Research Publication : B. H. Lee, Young, C. D., Choi, R., Sim, J. H., Bersuker, G., Kang, C. Y., Harris, R., Brown, G. A., Matthews, K., Song, S. C., Moumen, N., Barnett, J., Lysaght, P., Choi, K. S., Wen, H. C., Huffman, C., Alshareef, H., Majhi, P., Dr. Sundararaman Gopalan, Peterson, J., Kirsh, P., Li, H. J., Gutt, J., Gardner, M., Huff, H. R., Zeitzoff, P., Murto, R. W., Larson, L., and Ramiller, C., “Intrinsic characteristics of high-k devices and implications of fast transient charging effects (FTCE)”, in IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004., 2004.

Publisher : IEDM Technical Digest. IEEE International Electron Devices Meeting

Year : 2004

Integration issues of high-k gate stack: Process-induced charging

Cite this Research Publication : G. Bersuker, Gutt, J., Chaudhary, N., Moumen, N., Lee, B. H., Barnett, J., Dr. Sundararaman Gopalan, Brown, G., Kim, Y., Young, C. D., and , “Integration issues of high-k gate stack: Process-induced charging”, in Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International, 2004

Publisher : Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International, IEEE (2004)

Year : 2004

Experimental study of etched back thermal oxide for optimization of the Si/high-k interface

Cite this Research Publication : J. Barnett, Moumen, N., Gutt, J., Gardner, M., Huffman, C., Majhi, P., Peterson, J. J., Dr. Sundararaman Gopalan, Foran, B., Li, H. J., and , “Experimental study of etched back thermal oxide for optimization of the Si/high-k interface”, in 2004 Spring Meeting of the Material Research Society, 2004.


Publisher : 2004 Spring Meeting of the Material Research Society

Year : 2004

Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures

Cite this Research Publication : C. D. Young, Kerber, A., Hou, T. H., Cartier, E., Brown, G. A., Bersuker, G., Kim, Y., Lim, C., Gutt, J., Lysaght, P., and Dr. Sundararaman Gopalan, “Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures”, 2004.

Publisher : 2004

Year : 2003

EOT scaling and device issues for high-k gate dielectrics

Cite this Research Publication :
M. I. Gardner, Dr. Sundararaman Gopalan, Gutt, J., Peterson, J., Li, H. - J., and Huff, H. R., “EOT scaling and device issues for high-k gate dielectrics”, in Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on, 2003.

Publisher : Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop

Year : 2003

Charge trapping and mobility degradation in MOCVD hafnium silicate gate dielectric stack structures

Cite this Research Publication : C. D. Young, Kerber, A., Hou, T. H., Cartier, E., Brown, G. A., Bersuker, G., Kim, Y., Lim, C., Gutt, J., Lysaght, P., Dr. Sundararaman Gopalan, and , “Charge trapping and mobility degradation in MOCVD hafnium silicate gate dielectric stack structures”, 2003.

Publisher : 2003.

Year : 2002

Impact of NH/sub 3/ pre-treatment on the electrical and reliability characteristics of ultra thin hafnium silicate films prepared by re-oxidation method

Cite this Research Publication :
Dr. Sundararaman Gopalan, Choi, R., Onishi, K., Nieh, R., Kang, C. S., Cho, H. J., Krishnan, S., and Lee, J. C., “Impact of NH/sub 3/ pre-treatment on the electrical and reliability characteristics of ultra thin hafnium silicate films prepared by re-oxidation method”, in 60th DRC. Conference Digest Device Research Conference, 2002

Publisher : 60th DRC. Conference Digest Device Research Conference

Year : 2002

High quality MOSFETs fabrication with HfO/sub 2/ gate dielectric and tan gate electrode

Cite this Research Publication :
R. Choi, Onishi, K., Kang, C. Scok, Nieh, R., Dr. Sundararaman Gopalan, Cho, H. - J., Krishnan, S., and Lee, J. C., “High quality MOSFETs fabrication with HfO/sub 2/ gate dielectric and tan gate electrode”, in 60th DRC. Conference Digest Device Research Conference, 2002.

Publisher : 60th DRC. Conference Digest Device Research Conference, IEEE

Year : 2002

Fabrication of high quality ultra-thin HfO/sub 2/gate dielectric MOSFETs using deuterium anneal

Cite this Research Publication : R. Choi, Onishi, K., Kang, C. Seok, Dr. Sundararaman Gopalan, Nieh, R., Kim, Y. H., Han, J. H., Krishnan, S., Cho, H. - J., Shahriar, A., and , “Fabrication of high quality ultra-thin HfO/sub 2/gate dielectric MOSFETs using deuterium anneal”, in Electron Devices Meeting, 2002. IEDM'02. International, 2002.

Publisher : Electron Devices Meeting, 2002. IEDM'02. International, IEEE

Year : 2002

Effects of high-temperature forming gas anneal on HfO/sub 2/MOSFET performance

Cite this Research Publication :
K. Onishi, Kang, C. Seok, Choi, R., Cho, H. - J., Dr. Sundararaman Gopalan, Nieh, R., Krishnan, S., and Lee, J. C., “Effects of high-temperature forming gas anneal on HfO/sub 2/MOSFET performance”, in VLSI Technology, 2002. Digest of Technical Papers. 2002 Symposium on, 2002.


Publisher : VLSI Technology, 2002. Digest of Technical Papers. 2002 Symposium on, IEEE

Year : 2002

Comparison between ultra-thin ZrO/sub 2/ and ZrO/sub x/N/sub y/ gate dielectrics in TaN or poly-gated NMOSCAP and NMOSFET devices

Cite this Research Publication :
R. Nieh, Krishnan, S., Cho, H. - J., Kang, C. Seok, Dr. Sundararaman Gopalan, Onishi, K., Choi, R., and Lee, J. C., “Comparison between ultra-thin ZrO/sub 2/ and ZrO/sub x/N/sub y/ gate dielectrics in TaN or poly-gated NMOSCAP and NMOSFET devices”, in 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303), 2002.

Publisher : 2002 Symposium on VLSI Technology. Digest of Technical Papers

Year : 2002

Charging effects on reliability of HfO2 devices with polysilicon gate electrode

Cite this Research Publication : K. Onishi, Kang, C. Seok, Choi, R., Cho, H. - J., Dr. Sundararaman Gopalan, Nieh, R., Krishnan, S., and Lee, J. C., “Charging effects on reliability of HfO2 devices with polysilicon gate electrode”, in 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320), 2002.

Publisher : 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual

Year : 2001

HIGH-K GATE DIELECTRICS: Hf02, ZK> 2, AND THEIR SILICATES

Cite this Research Publication : R. Nieh, Onishi, K., Choi, R., Dharmarajan, E., Dr. Sundararaman Gopalan, Kang, C. S., and Lee, J. C., “HIGH-K GATE DIELECTRICS: Hf02, ZK> 2, AND THEIR SILICATES”, in Rapid Thermal and Other Short-time Processing Technologies II: Proceedings of the International Symposium, 2001.

Publisher : Rapid Thermal and Other Short-time Processing Technologies II: Proceedings of the International Symposium,

Year : 2001

Dopant Penetration Effects on Polysilicon Gate HfO\~ 2 MOSFET’s

Cite this Research Publication : K. Onishi, Kang, L., Choi, R., Dharmarajan, E., Dr. Sundararaman Gopalan, Jeon, Y., Kang, C. Seok, Lee, B. Hun, Nieh, R., and Lee, J. C., “Dopant Penetration Effects on Polysilicon Gate HfO\~ 2 MOSFET's”, in Symposium on VLSI Technology, 2001.

Publisher : Symposium on VLSI Technology

Year : 2001

Reliability characteristics, including NBTI, of polysilicon gate HfO/sub 2/ MOSFET’s

Cite this Research Publication : K. Onishi, Kang, C. Seok, Choi, R., Cho, H. - J., Dr. Sundararaman Gopalan, Nieh, R., Dharmarajan, E., and Lee, J. C., “Reliability characteristics, including NBTI, of polysilicon gate HfO/sub 2/ MOSFET's”, in International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224), 2001.

Publisher : International Electron Devices Meeting. Technical Digest

Year : 2001

Dopant Penetration Effects on Polysilicon Gate HfO\~ 2 MOSFET’s

Cite this Research Publication : K. Onishi, Kang, L., Choi, R., Dharmarajan, E., Dr. Sundararaman Gopalan, Jeon, Y., Kang, C. Seok, Lee, B. Hun, Nieh, R., and Lee, J. C., “Dopant Penetration Effects on Polysilicon Gate HfO\~ 2 MOSFET's”, in Symposium on VLSI Technology, 2001.

Publisher : Symposium on VLSI Technology

Year : 2001

Ultrathin Hafnium Silicate Films with TaN and Polysilicon Gate Electrodes for Gate Dielectric Application

Cite this Research Publication : Dr. Sundararaman Gopalan, Dharmarajan, E., Nieh, R., Onishi, K., Kang, C. S., Choi, R., Cho, H., and Lee, J. C., “Ultrathin Hafnium Silicate Films with TaN and Polysilicon Gate Electrodes for Gate Dielectric Application”, in 32nd IEEE Semiconductor Interface Specialist Conference, Washington DC, 2001.

Publisher : 32nd IEEE Semiconductor Interface Specialist Conference, Washington DC

Year : 2001

Performance effects of two nitrogen incorporation techniques on TaN/HfO2 and poly/HfO2 MOSCAP and MOSFET devices

Cite this Research Publication : R. Nieh, Onishi, K., Choi, R., Cho, H. - J., Kang, C. Seok, Dr. Sundararaman Gopalan, Krishna, S., and Lee, J. C., “Performance effects of two nitrogen incorporation techniques on TaN/HfO2 and poly/HfO2 MOSCAP and MOSFET devices”, in Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537), 2001.

Publisher : Extended Abstracts of International Workshop on Gate Insulator

Year : 2001

Novel nitrogen profile engineering for improved TaN/HfO/sub 2//Si MOSFET performance

Cite this Research Publication : H. J. Cho, Kang, C. S., Onishi, K., Dr. Sundararaman Gopalan, Nieh, R., Choi, R., Dharmarajan, E., and Lee, J. C., “Novel nitrogen profile engineering for improved TaN/HfO/sub 2//Si MOSFET performance”, in International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224), 2001.

Publisher : International Electron Devices Meeting. Technical Digest

Year : 2001

High-quality ultra-thin HfO/sub 2/ gate dielectric MOSFETs with TaN electrode and nitridation surface preparation

Cite this Research Publication : R. Choi, Kang, C. Seok, Lee, B. Hun, Onishi, K., Nieh, R., Dr. Sundararaman Gopalan, Dharmarajan, E., and Lee, J. C., “High-quality ultra-thin HfO/sub 2/ gate dielectric MOSFETs with TaN electrode and nitridation surface preparation”, in 2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184), 2001.

Publisher : Symposium on VLSI Technology. Digest of Technical Papers

Year : 2001

HIGH-K GATE DIELECTRICS: Hf02, ZK> 2, AND THEIR SILICATES

Cite this Research Publication : R. Nieh, Onishi, K., Choi, R., Dharmarajan, E., Dr. Sundararaman Gopalan, Kang, C. S., and Lee, J. C., “HIGH-K GATE DIELECTRICS: Hf02, ZK> 2, AND THEIR SILICATES”, in Rapid Thermal and Other Short-time Processing Technologies II: Proceedings of the International Symposium, 2001.

Publisher : The Electrochemical Society

Year : 2000

Single-Layer Thin HfO\~ 2 Gate Dielectric with n+-Polysilicon Gate

Cite this Research Publication : L. Kang, Jeon, Y., Onishi, K., Lee, B. Hun, Qi, W. - J., Nieh, R., Dr. Sundararaman Gopalan, and Lee, J. C., “Single-Layer Thin HfO\~ 2 Gate Dielectric with n+-Polysilicon Gate”, in SYMPOSIUM ON VLSI TECHNOLOGY, 2000.

Publisher : SYMPOSIUM ON VLSI TECHNOLOGY

Year : 2000

Temperature effect on the reliability of ZrO2 gate dielectric deposited directly on silicon

Cite this Research Publication : W. - J. Qi, Nieh, R., Onishi, R., Lee, B. Hun, Kang, L., Jeon, Y., Dr. Sundararaman Gopalan, and Lee, J. C., “Temperature effect on the reliability of ZrO2 gate dielectric deposited directly on silicon”, in 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059), 2000.

Publisher : 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual

Year : 2000

Single-Layer Thin HfO\~ 2 Gate Dielectric with n+-Polysilicon Gate

Cite this Research Publication : L. Kang, Jeon, Y., Onishi, K., Lee, B. Hun, Qi, W. - J., Nieh, R., Dr. Sundararaman Gopalan, and Lee, J. C., “Single-Layer Thin HfO\~ 2 Gate Dielectric with n+-Polysilicon Gate”, in SYMPOSIUM ON VLSI TECHNOLOGY, 2000.

Publisher : SYMPOSIUM ON VLSI TECHNOLOGY

Year : 2000

PROCESSING EFFECTS AND ELECTRICAL EVALUATION OF Z1O2 FORMED BY RTP OXIDATION OF Zr

Cite this Research Publication : R. Nieh, Qi, W. - J., Lee, B. Hun, Kang, L., Jeon, Y., Onishi, K., Dr. Sundararaman Gopalan, Kang, C. Seok, Dharmarajan, E., Choi, R., and , “PROCESSING EFFECTS AND ELECTRICAL EVALUATION OF Z1O2 FORMED BY RTP OXIDATION OF Zr”, in Low and High Dielectric Constant Materials: Materials Science, Processing, and Reliability Issues: Proceedings of the Fifth International Symposium, 2000.


Publisher : Low and High Dielectric Constant Materials: Materials Science, Processing, and Reliability Issues: Proceedings of the Fifth International Symposium, The Electrochemical Society

Year : 2000

MOSFET devices with polysilicon on single-layer HfO/sub 2/ high-K dielectrics

Cite this Research Publication : L. Kang, Onishi, K., Jeon, Y., Lee, B. Hun, Kang, C., Qi, W. - J., Nieh, R., Dr. Sundararaman Gopalan, Choi, R., and Lee, J. C., “MOSFET devices with polysilicon on single-layer HfO/sub 2/ high-K dielectrics”, in International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138), 2000.

Publisher : International Electron Devices Meeting 2000. Technical Digest. IEDM

Year : 2000

Characteristics of TaN gate MOSFET with ultrathin hafnium oxide (8/spl Aring/-12/spl Aring/)

Cite this Research Publication : B. Hun Lee, Choi, R., Kang, L., Dr. Sundararaman Gopalan, Nieh, R., Onishi, K., Jeon, Y., Qi, W. - J., Kang, C., and Lee, J. C., “Characteristics of TaN gate MOSFET with ultrathin hafnium oxide (8/spl Aring/-12/spl Aring/)”, in Electron Devices Meeting, 2000. IEDM'00. Technical Digest. International, 2000.


Publisher : Electron Devices Meeting, 2000. IEDM'00. Technical Digest. International, IEEE

Year : 1999

Highly reliable thin hafnium oxide gate dielectric

Cite this Research Publication : L. Kang, Lee, B. - H., Qi, W. - J., Jeon, Y. - J., Nieh, R., Dr. Sundararaman Gopalan, Onishi, K., and Lee, J. C., “Highly reliable thin hafnium oxide gate dielectric”, in MRS Proceedings, 1999.


Publisher : MRS Proceedings, Cambridge University Press (1999)

Year : 1998

Reliability Characteristics, Including NBTI, of Polysilicon Gate HfO\~ 2 MOSFET’s

Cite this Research Publication : K. Onishi, Kang, C. Seok, Choi, R., Cho, H. - J., Dr. Sundararaman Gopalan, Nieh, R., Dharmarajan, E., and Lee, J. C., “Reliability Characteristics, Including NBTI, of Polysilicon Gate HfO\~ 2 MOSFET's”, in INTERNATIONAL ELECTRON DEVICES MEETING, 1998.

Publisher : INTERNATIONAL ELECTRON DEVICES MEETING,

Year : 1998

Novel Nitrogen Profile Engineering for Improved TaN/HfO\~ 2/Si MOSFET Performance

Cite this Research Publication : H. - J. Cho, Kang, C. S., Onishi, K., Dr. Sundararaman Gopalan, Nieh, R., Choi, R., Dharmarajan, E., and Lee, J. C., “Novel Nitrogen Profile Engineering for Improved TaN/HfO\~ 2/Si MOSFET Performance”, in International Electron Devices Meeting, 1998.

Publisher : International Electron Devices Meeting,

Year : 1998

Novel Nitrogen Profile Engineering for Improved TaN/HfO~ 2/Si MOSFET Performance

Cite this Research Publication : H. - J. Cho, Kang, C. S., Onishi, K., Dr. Sundararaman Gopalan, Nieh, R., Choi, R., Dharmarajan, E., and Lee, J. C., “Novel Nitrogen Profile Engineering for Improved TaN/HfO\~ 2/Si MOSFET Performance”, in International Electron Devices Meeting, 1998.

Publisher : International Electron Devices Meeting

Year : 1998

Reliability Characteristics, Including NBTI, of Polysilicon Gate HfO~ 2 MOSFET’s

Cite this Research Publication : K. Onishi, Kang, C. Seok, Choi, R., Cho, H. - J., Dr. Sundararaman Gopalan, Nieh, R., Dharmarajan, E., and Lee, J. C., “Reliability Characteristics, Including NBTI, of Polysilicon Gate HfO\~ 2 MOSFET's”, in INTERNATIONAL ELECTRON DEVICES MEETING, 1998.

Publisher : INTERNATIONAL ELECTRON DEVICES MEETING

Year : 1998

Study of Rf-Sputtered Ba (Zr x Ti 1- x) O 3 Thin Films for Ulsi Dram Application

Cite this Research Publication : J. - H. Lee, Chen, T. - S., Balu, V., Han, J., Mohammedali, R., Dr. Sundararaman Gopalan, Wong, C. - H., and Lee, J. C., “Study of Rf-Sputtered Ba (Zr x Ti 1- x) O 3 Thin Films for Ulsi Dram Application”, in MRS Proceedings, 1998.


Publisher : MRS Proceedings, Cambridge University Press

Conference Proceedings

Year : 2019

Photovoltaic studies of hybrid metal oxide semiconductors as photo anode in dye sensitized solar cells

Cite this Research Publication : Dr. Sreekala C. O., Hegde, V., Nivin, T. S., Sreeja, S. D. Baby, and Dr. Sundararaman Gopalan, “Photovoltaic studies of hybrid metal oxide semiconductors as photo anode in dye sensitized solar cells”, AIP Conference Proceedings. 2019.

Publisher : AIP Conference Proceedings

Year : 2019

Piezoelectric energy harvesting system suitable for remotely placed sensors with inter-digitated design

Cite this Research Publication : Dr. Sreekala C. O., Dr. Sundararaman Gopalan, and Baby Sreeja S. D., “Piezoelectric energy harvesting system suitable for remotely placed sensors with inter-digitated design”, Publisher Logo Conference Proceedings, vol. 2162, 1 vol. 2019.

Publisher : Publisher Logo Conference Proceedings,

Year : 2019

Effect of Lithium on the Mechanical Behavior of Magnesium

Cite this Research Publication : Rahulan N., Dr. Sundararaman Gopalan, and Kumaran S., “Effect of Lithium on the Mechanical Behavior of Magnesium”, Materials Today: Proceedings, vol. 18, Part 7. pp. 2573 - 2580, 2019

Publisher : Materials Today: Proceedings

Year : 2018

Mechanical behavior of Mg-Li-Al alloys

Cite this Research Publication : Rahulan N., Dr. Sundararaman Gopalan, and Kumaran S., “Mechanical behavior of Mg-Li-Al alloys”, Materials Today: Proceedings, vol. 5, no. 9, Part 3, pp. 17935 - 17943, 2018.

Publisher : Materials Today: Proceedings,

Year : 2017

Al203 thin films on Silicon and Germanium substrates for CMOS and flash memory applications

Cite this Research Publication :
Dr. Sundararaman Gopalan, Dutta, S., Ramesh, S., Prathapan, R., and Sreehari, G., “Al203 thin films on Silicon and Germanium substrates for CMOS and flash memory applications”, AIP Conference Proceedings International Conference on Functional Materials, Characterization, Solid State Physics, Power, Thermal and Combustion Energy 2017, FCSPTC 2017,Andhra Pradesh, India, vol. 1859. American Institute of Physics Inc., 2017

Publisher : AIP Conference Proceedings International Conference on Functional Materials, Characterization, Solid State Physics, Power, Thermal and Combustion Energy

Year : 1999

Effect of N2O on the RF-magnetron Sputtered SrTiO3 Films for ULSI DRAM Application

Cite this Research Publication :
Dr. Sundararaman Gopalan, Han, J. H., Balu, V., Lee, J. H., Mohemmedali, R., Wong, C. H., and Lee, J. C., “Effect of N2O on the RF-magnetron Sputtered SrTiO3 Films for ULSI DRAM Application”, Proceedings of the 11th International Symposium on Integrated Ferroelectrics. Colorado Springs, 1999.

Publisher : Proceedings of the 11th International Symposium on Integrated Ferroelectrics, Colorado Springs

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