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Dr. Sundararaman Gopalan

Professor

Dr. Sundararaman Gopalan currently serves as Professor at department of Electronics and Communication, Amrita School of Engineering.

Qualification: B-Tech, MS, Ph.D
sundar@am.amrita.edu
Research Interest: Electronic Materials, Semiconductor Devices, Very-Large-Scale Integration (VLSI) Fabrication

Bio

Sundar Gopalan received his Bachelor of Technology degree from the Institute of Technology, Banaras Hindu University, Varanasi, India, in May 1995. He completed his M.S. and Ph.D. degrees from the University of Texas at Austin, USA in the area of Microelectronic Engineering in 2002. He worked in International Sematech, a semiconductor research consortium located in Austin, Texas, USA, as a Post-Doc and Process research engineer for two years in the Advanced Gate Stack Engineering Group. There he was involved in studying and designing new gate stack structures for the next generation CMOS Technology. He joined the Department of Electronics and Communication Engineering at Amrita School of Engineering, Amritapuri Campus, India, in August of 2004. He is serving as professor and chairperson of ECE department. He has authored/co-authored more than 42 International publications. He specializes in the areas of Electronic Materials, Semiconductor Devices, VLSI Fabrication, Materials Characterization, Processing and Mechanical Behavior of Materials.

 

Publications

Conference Paper

IoT Based Low Cost Single Sensor Node Remote Health Monitoring System

Authors : Dr. Sundararaman Gopalan, V. Virajit Garbhapu

Publisher : 8th International Conference on Emerging Ubiquitous Systems and Pervasive Networks, EUSPN 2017 and the 7th International Conference on Current and Future Trends of Information and Communication Technologies in Healthcare, ICTH 2017

The critical role of anchor customers in rural microgrids, Impact of load factor on energy cost

Authors : Dr. Sundararaman Gopalan, Dr. Fabien Chidanand Robert, Sisodia, G. S.

Publisher : 2017 International Conference on Computation of Power, Energy Information and Commuincation (ICCPEIC)

Comparison of High K Metal Gate Based CMOS Amplifiers performance with traditional Gate stack structures

Authors : Dr. Sundararaman Gopalan, S. M, Anand, D., A, D. P.

Publisher : ICEES 2018, 4th International Conference on Electrical Energy System

EOT scaling and device issues for high-k gate dielectrics

Authors : Dr. Sundararaman Gopalan, M. I. Gardner, Gutt, J., Peterson, J., Li, H. - J., and Huff, H. R.

Publisher : Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on

Charge trapping and mobility degradation in MOCVD hafnium silicate gate dielectric stack structures

Authors : Dr. Sundararaman Gopalan, C. D. Young, Kerber, A., Hou, T. H., Cartier, E., Brown, G. A., Bersuker, G., Kim, Y., Lim, C., Gutt, J., Lysaght, P

Intrinsic characteristics of high-k devices and implications of fast transient charging effects (FTCE)

Authors : Dr. Sundararaman Gopalan, B. H. Lee, Young, C. D., Choi, R., Sim, J. H., Bersuker, G., Kang, C. Y., Harris, R., Brown, G. A., Matthews, K., Song, S. C., Moumen, N., Barnett, J., Lysaght, P., Choi, K. S., Wen, H. C., Huffman, C., Alshareef, H., Majhi, P., Dr. Sundararaman Gopalan, Peterson, J., Kirsh, P., Li, H. J., Gutt, J., Gardner, M., Huff, H. R., Zeitzoff, P., Murto, R. W., Larson, L., and Ramiller, C.

Publisher : IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.

Integration issues of high-k gate stack: Process-induced charging

Authors : Dr. Sundararaman Gopalan, G. Bersuker, Gutt, J., Chaudhary, N., Moumen, N., Lee, B. H., Barnett, J., Dr. Sundararaman Gopalan, Brown, G., Kim, Y., Young, C. D

Publisher : Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International

Experimental study of etched back thermal oxide for optimization of the Si/high-k interface

Authors : Dr. Sundararaman Gopalan, J. Barnett, Moumen, N., Gutt, J., Gardner, M., Huffman, C., Majhi, P., Peterson, J. J., Foran, B., Li, H. J

Publisher : 2004 Spring Meeting of the Material Research Society

Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures

Authors : Dr. Sundararaman Gopalan, C. D. Young, Kerber, A., Hou, T. H., Cartier, E., Brown, G. A., Bersuker, G., Kim, Y., Lim, C., Gutt, J., Lysaght, P

Impact of NH/sub 3/ pre-treatment on the electrical and reliability characteristics of ultra thin hafnium silicate films prepared by re-oxidation method

Authors : Dr. Sundararaman Gopalan, Choi, R., Onishi, K., Nieh, R., Kang, C. S., Cho, H. J., Krishnan, S., and Lee, J. C.

Publisher : 60th DRC. Conference Digest Device Research Conference

High quality MOSFETs fabrication with HfO/sub 2/ gate dielectric and tan gate electrode

Authors : Dr. Sundararaman Gopalan, R. Choi, Onishi, K., Kang, C. Scok, Nieh, R., Cho, H. - J., Krishnan, S., and Lee, J. C.

Publisher : 60th DRC. Conference Digest Device Research Conference

Fabrication of high quality ultra-thin HfO/sub 2/gate dielectric MOSFETs using deuterium anneal

Authors : Dr. Sundararaman Gopalan, R. Choi, Onishi, K., Kang, C. Seok, Nieh, R., Kim, Y. H., Han, J. H., Krishnan, S., Cho, H. - J., Shahriar, A

Publisher : Electron Devices Meeting, 2002. IEDM'02. International

Effects of high-temperature forming gas anneal on HfO/sub 2/MOSFET performance

Authors : Dr. Sundararaman Gopalan, K. Onishi, Kang, C. Seok, Choi, R., Cho, H. - J., Nieh, R., Krishnan, S., and Lee, J. C

Publisher : VLSI Technology, 2002. Digest of Technical Papers. 2002 Symposium on

Comparison between ultra-thin ZrO/sub 2/ and ZrO/sub x/N/sub y/ gate dielectrics in TaN or poly-gated NMOSCAP and NMOSFET devices

Authors : Dr. Sundararaman Gopalan, R. Nieh, Krishnan, S., Cho, H. - J., Kang, C. Seok, Dr. Sundararaman Gopalan, Onishi, K., Choi, R., and Lee, J. C

Publisher : 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)

Charging effects on reliability of HfO2 devices with polysilicon gate electrode

Authors : Dr. Sundararaman Gopalan, K. Onishi, Kang, C. Seok, Choi, R., Cho, H. - J., Nieh, R., Krishnan, S., and Lee, J. C

Publisher : 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320)

ALD of advanced high-k and metal gate stacks for MOS devices

Authors : Dr. Sundararaman Gopalan, J. Gutt, Dr. Sundararaman Gopalan, Brown, G. A., Kirsch, P. D., Peterson, J. J., Gardner, M. I., Li, H. - J., Lysaght, P., Alshareef, H. N., Choi, K

Publisher : Proceedings-Electrochemical Society

Conference Proceedings

Effect of N2O on the RF-magnetron Sputtered SrTiO3 Films for ULSI DRAM Application

Authors : Dr. Sundararaman Gopalan, Han, J. H., Balu, V., Lee, J. H., Mohemmedali, R., Wong, C. H., and Lee, J. C

Publisher : Proceedings of the 11th International Symposium on Integrated Ferroelectrics

Al203 thin films on Silicon and Germanium substrates for CMOS and flash memory applications

Authors : Dr. Sundararaman Gopalan, Dutta, S., Ramesh, S., Prathapan, R., and Sreehari, G

Publisher : AIP Conference Proceedings International Conference on Functional Materials, Characterization, Solid State Physics, Power, Thermal and Combustion Energy 2017, FCSPTC 2017,Andhra Pradesh, India

Effect of Lithium on the Mechanical Behavior of Magnesium

Authors : Dr. Sundararaman Gopalan, Rahulan N, Kumaran S.

Publisher : Materials Today: Proceedings

Journal Article

Effect of Silicon Nitride on Physical Properties of SBR

Authors : Dr. Sundararaman Gopalan, Rahulan N, Anirudh Mohan T P; R. Harikrishnan;

Publisher : Materials Today: Proceedings, vol. 43, pp. 3833-3836, 2021.

Bonding states and electrical properties of ultrathin HfO$_x$N$_y$ gate dielectrics

Authors : Dr. Sundararaman Gopalan, C. S. Kang, Cho, H. - J., Onishi, K., Nieh, R., Choi, R., Krishnan, S., Han, J. H., and Lee, J. C

Publisher : Applied Physics Letters

The niobium doping effects on resistance degradation of strontium titanate thin film capacitors

Authors : Dr. Sundararaman Gopalan, J. - H. Lee, Mohammedali, R., Han, J. H., Balu, V., Wong, C. - H., and Lee, J. C.

Publisher : Applied physics letters

Effect of niobium doping on the microstructure and electrical properties of strontium titanate thin films for semiconductor memory application

Authors : Dr. Sundararaman Gopalan, Wong, C. - H., Balu, V., Lee, J. - H., Han, J. H., Mohammedali, R., and Lee, J. C

Publisher : Applied physics letters

Ultrathin Gate Oxynitrides Grown Using Fast Ramp Vertical Furnace for Sub-130 Nanometer Technology

Authors : Dr. Sundararaman Gopalan, A. Lucas, Lee, J. C., Kaushal, S., Niino, R., and Tada, Y.

Publisher : Electrochemical and Solid-State Letters

Study of the electronic conduction mechanism in Nb-doped SrTiO3 thin films with Ir and Pt electrodes

Authors : Dr. Sundararaman Gopalan, Balu, V., Lee, J. - H., Hee-Han, J., and Lee, J. C

Publisher : Applied Physics Letters

Low-cost remote patient monitoring system based on reduced platform computer technology.

Authors : Dr. Sundararaman Gopalan, N. A. Jacob, Pillai, V., Nair, S., ,, Harrell, D. T., Delhommer, R., Chen, B., Sanchez, I., Almstrum, V

Publisher : Telemedicine journal and e-health : the official journal of the American Telemedicine Association

Identification of current transport mechanism in Al2O3 thin films for memory applications

Authors : Dr. Sundararaman Gopalan, S. Ramesh, Dutta, S., Balakrishnan Shankar

Publisher : Applied Nanoscience

Effects of substrate heating and post-deposition annealing on characteristics of thin MOCVD HfO 2 films

Authors : Dr. Sundararaman Gopalan, Ramesh, S., Dutta, S., and Garbhapu, V. Virajit

Publisher : IOP Conference Series: Materials Science and Engineering

A critical review on the utilization of storage and demand response on the implementation of renewable energy microgrids

Authors : Dr. Sundararaman Gopalan, D. Fabien Chi Robert, Sisodia, G. Singh

Publisher : Sustainable Cities and Society, Special issue on Microgrid Implementation and Optimization, Elsevier

Affordable Rural Electricity Through Intelligent Grid Extension And Local Renewable Energy Generation

Authors : Dr. Sundararaman Gopalan, F. C. Robert, Sisodia, G. S.

Publisher : Sustainable Cities and Society, Special issue on Microgrid Implementation and Optimization; Elsevier

Subnanometer scaling of HfO2/metal electrode gate stacks

Authors : Dr. Sundararaman Gopalan, J. J. Peterson, Young, C. D., Barnett, J., Dr. Sundararaman Gopalan, Gutt, J., Lee, C. - H., Li, H. - J., Hou, T. - H., Kim, Y., Lim, C

Publisher : Electrochemical and solid-state letters

Evaluation of silicon surface nitridation effects on ultra-thin ZrO2 gate dielectrics

Authors : Dr. Sundararaman Gopalan, R. Nieh, Choi, R., Onishi, K., Kang, C. Seok, Cho, H. - J., Krishnan, S., and Lee, J. C

Publisher : Applied physics letters

Improvement of surface carrier mobility of HfO 2 MOSFETs by high-temperature forming gas annealing

Authors : Dr. Sundararaman Gopalan, K. Onishi, Kang, C. Seok, Choi, R., Cho, H. - J., Dr. Sundararaman Gopalan, Nieh, R. E., Krishnan, S. A., and Lee, J. C

Publisher : Electron Devices, IEEE Transactions on

High-performance TaN/HfSiON/Si metal-oxide-semiconductor structures prepared by NH3 post-deposition anneal

Authors : Dr. Sundararaman Gopalan, M. Shahariar Akbar, Dr. Sundararaman Gopalan, Cho, H. - J., Onishi, K., Choi, R., Nieh, R., Kang, C. S., Kim, Y. H., Han, J., Krishnan, S.

Publisher : Applied physics letters

Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric

Authors : Dr. Sundararaman Gopalan, L. Kang, Lee, B. Hun, Qi, W. - J., Jeon, Y., Nieh, R., Onishi, K., and Lee, J. C

Publisher : Electron Device Letters, IEEE

Structural and electrical properties of HfO 2 with top nitrogen incorporated layer

Authors : Dr. Sundararaman Gopalan, H. - J. Cho, Kang, C. Seok, Onishi, K., Nieh, R., Choi, R., Krishnan, S., and Lee, J. C.

Publisher : Electron Device Letters, IEEE

Electrical and physical characteristics of ultrathin hafnium silicate films with polycrystalline silicon and TaN gates

Authors : Dr. Sundararaman Gopalan, Onishi, K., Nieh, R., Kang, C. S., Choi, R., Cho, H. - J., Krishnan, S., and Lee, J. C

Publisher : Applied physics letters

Area dependence of TDDB characteristics for HfO2 gate dielectrics

Authors : Dr. Sundararaman Gopalan, Y. Hee Kim, Onishi, K., Kang, C. Seok, Cho, H. - J., Nieh, R., Choi, R., Han, J., Krishnan, S., and Lee, J. C.

Publisher : IEEE Electron Device Letters

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