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Methods for trench isolation with reduced step height

Publication Type : Other

Source : 2003

Url :

Campus : Amritapuri

School : Centre for Cybersecurity Systems and Networks, School of Engineering

Center : TBI

Department : Chemical, cyber Security

Year : 2003

Abstract : Shallow trench isolation techniques are disclosed in which a nitride layer is formed on a semiconductor substrate, and a trench is formed through the nitride layer and into the semiconductor substrate. The nitride layer is removed prior to filling the isolation trench, and the fill material is planarized using a fixed-abrasive CMP process to mitigate or avoid step height in the shallow trench isolation process.

Cite this Research Publication : K. Achuthan and Sahota, K., “Methods for trench isolation with reduced step height”. 2003.

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