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Static noise margin analysis of 6T SRAM cell

Publisher : Advances in Intelligent Systems and Computing

Campus : Amritapuri

Year : 2016

Abstract : This report describes the SNM calculation and analysis of SRAM cell which are obtained from simulations performed in Cadence Virtuoso 90 nm technology. The SRAM cell structure is implemented with a compact structure of six transistors. Static noise margin is found from the butterfly curve obtained for read, write, and hold modes of operation. © Springer India 2016.

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